JPS6489427A - Connecting accuracy measuring method in lithography apparatus - Google Patents

Connecting accuracy measuring method in lithography apparatus

Info

Publication number
JPS6489427A
JPS6489427A JP62246165A JP24616587A JPS6489427A JP S6489427 A JPS6489427 A JP S6489427A JP 62246165 A JP62246165 A JP 62246165A JP 24616587 A JP24616587 A JP 24616587A JP S6489427 A JPS6489427 A JP S6489427A
Authority
JP
Japan
Prior art keywords
drawn
view
field
pattern
measured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62246165A
Other languages
Japanese (ja)
Inventor
Mamoru Nakasuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62246165A priority Critical patent/JPS6489427A/en
Publication of JPS6489427A publication Critical patent/JPS6489427A/en
Pending legal-status Critical Current

Links

Landscapes

  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To measure connecting accuracy in the parallel direction highly accurately, with regard to the connecting accuracy, which is in parallel with a boundary between fields of views, by measuring a pitch between a pattern, which is formed when the field of view is drawn in the first field view, and a pattern, which is formed when the neighboring second field of view is drawn. CONSTITUTION:When connecting accuracy, which is in parallel with a boundary between fields of views, is measured, a pattern 13 is drawn when a field of view 21 on the right side is drawn. When a field of view 22 on the right side is drawn, a pattern 14 is drawn. Namely, when the left field of view 21 is drawn, the pattern 13 is formed so that the pattern 13 is made to intrude into the field of view 22. A pitch P2 between the patterns 13 and 14 is measured in a region where the patterns 13 and 14 can be measured at the same time. Thus, the pitch P2 can be measured accurately by one beam scanning, and the connecting accuracy of the right and left fields of views can be measured highly accurately.
JP62246165A 1987-09-30 1987-09-30 Connecting accuracy measuring method in lithography apparatus Pending JPS6489427A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62246165A JPS6489427A (en) 1987-09-30 1987-09-30 Connecting accuracy measuring method in lithography apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62246165A JPS6489427A (en) 1987-09-30 1987-09-30 Connecting accuracy measuring method in lithography apparatus

Publications (1)

Publication Number Publication Date
JPS6489427A true JPS6489427A (en) 1989-04-03

Family

ID=17144473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62246165A Pending JPS6489427A (en) 1987-09-30 1987-09-30 Connecting accuracy measuring method in lithography apparatus

Country Status (1)

Country Link
JP (1) JPS6489427A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6417516B1 (en) 1999-03-26 2002-07-09 Nec Corporation Electron beam lithographing method and apparatus thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6417516B1 (en) 1999-03-26 2002-07-09 Nec Corporation Electron beam lithographing method and apparatus thereof

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