JPS57148347A - Measurement of connection accuracy for electron beam exposure - Google Patents
Measurement of connection accuracy for electron beam exposureInfo
- Publication number
- JPS57148347A JPS57148347A JP56033676A JP3367681A JPS57148347A JP S57148347 A JPS57148347 A JP S57148347A JP 56033676 A JP56033676 A JP 56033676A JP 3367681 A JP3367681 A JP 3367681A JP S57148347 A JPS57148347 A JP S57148347A
- Authority
- JP
- Japan
- Prior art keywords
- graduations
- vernier
- main
- boundary
- measurement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
Abstract
PURPOSE:To obtain high connection accuracy for not only parallel but perpendicular directions to a field boundary, by providing main and vernier graduations across and with a certain angle to the field boundary to measure two neighboring exposure boundaries, and by observing a difference between them. CONSTITUTION:Main 7 and vernier 9 graduations are provided across a boundary 2 between neighboring fields FL and FR to measure two neighboring exposure boundaries. In this constitution, the main graduations 7 consists of central long graduations C and graduations of equal intervals on both sides, and so does the vernier graduations 9. All the graduations are inclined 45 deg. or 135 deg. to the boundary 2, and aligned on the bases of central graduations C and CS for the main 7 and the vernier 9. This enables to tell the correct connection by only reading the graduations.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56033676A JPS57148347A (en) | 1981-03-09 | 1981-03-09 | Measurement of connection accuracy for electron beam exposure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56033676A JPS57148347A (en) | 1981-03-09 | 1981-03-09 | Measurement of connection accuracy for electron beam exposure |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57148347A true JPS57148347A (en) | 1982-09-13 |
JPS6214089B2 JPS6214089B2 (en) | 1987-03-31 |
Family
ID=12393049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56033676A Granted JPS57148347A (en) | 1981-03-09 | 1981-03-09 | Measurement of connection accuracy for electron beam exposure |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57148347A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5834731U (en) * | 1981-08-28 | 1983-03-07 | 三洋電機株式会社 | Electron beam exposure mask |
JPS604216A (en) * | 1983-06-21 | 1985-01-10 | Mitsubishi Electric Corp | Electron beam exposure |
JPS62263633A (en) * | 1986-05-09 | 1987-11-16 | Mitsubishi Electric Corp | Drawing of pattern |
JPH025407A (en) * | 1988-06-22 | 1990-01-10 | Nec Corp | Measurement of connection accuracy for electron beam lithography |
KR100242503B1 (en) * | 1995-12-18 | 2000-03-02 | 가네꼬 히사시 | Misregistration detecting marks for pattern formen on semiconductor substrate |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01118074U (en) * | 1988-02-02 | 1989-08-09 |
-
1981
- 1981-03-09 JP JP56033676A patent/JPS57148347A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5834731U (en) * | 1981-08-28 | 1983-03-07 | 三洋電機株式会社 | Electron beam exposure mask |
JPS604216A (en) * | 1983-06-21 | 1985-01-10 | Mitsubishi Electric Corp | Electron beam exposure |
JPS62263633A (en) * | 1986-05-09 | 1987-11-16 | Mitsubishi Electric Corp | Drawing of pattern |
JPH025407A (en) * | 1988-06-22 | 1990-01-10 | Nec Corp | Measurement of connection accuracy for electron beam lithography |
KR100242503B1 (en) * | 1995-12-18 | 2000-03-02 | 가네꼬 히사시 | Misregistration detecting marks for pattern formen on semiconductor substrate |
Also Published As
Publication number | Publication date |
---|---|
JPS6214089B2 (en) | 1987-03-31 |
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