JPS5779641A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5779641A JPS5779641A JP15614480A JP15614480A JPS5779641A JP S5779641 A JPS5779641 A JP S5779641A JP 15614480 A JP15614480 A JP 15614480A JP 15614480 A JP15614480 A JP 15614480A JP S5779641 A JPS5779641 A JP S5779641A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- polycrystalline
- layer
- intervals
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 2
- 238000002955 isolation Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15614480A JPS5779641A (en) | 1980-11-06 | 1980-11-06 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15614480A JPS5779641A (en) | 1980-11-06 | 1980-11-06 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5779641A true JPS5779641A (en) | 1982-05-18 |
JPS628029B2 JPS628029B2 (enrdf_load_stackoverflow) | 1987-02-20 |
Family
ID=15621283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15614480A Granted JPS5779641A (en) | 1980-11-06 | 1980-11-06 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5779641A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4818235A (en) * | 1987-02-10 | 1989-04-04 | Industry Technology Research Institute | Isolation structures for integrated circuits |
JPH09123504A (ja) * | 1995-08-30 | 1997-05-13 | Alps Electric Co Ltd | サーマルヘッドおよびサーマルヘッドの製造方法 |
-
1980
- 1980-11-06 JP JP15614480A patent/JPS5779641A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4818235A (en) * | 1987-02-10 | 1989-04-04 | Industry Technology Research Institute | Isolation structures for integrated circuits |
JPH09123504A (ja) * | 1995-08-30 | 1997-05-13 | Alps Electric Co Ltd | サーマルヘッドおよびサーマルヘッドの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS628029B2 (enrdf_load_stackoverflow) | 1987-02-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5779641A (en) | Manufacture of semiconductor device | |
JPS5772333A (en) | Manufacture of semiconductor device | |
JPS5779642A (en) | Manufacture of semiconductor device | |
JPS5776856A (en) | Manufacture of semiconductor device | |
JPS5779640A (en) | Manufacture of semiconductor device | |
JPS56135975A (en) | Manufacture of semiconductor device | |
JPS5779643A (en) | Semiconductor device | |
JPS5458381A (en) | Manufacture for semiconductor device | |
JPS571243A (en) | Manufacture of semiconductor device | |
JPS5779644A (en) | Manufacture of semiconductor device | |
JPS57202756A (en) | Manufacture of semiconductor device | |
JPS5718362A (en) | Semiconductor device and manufacture thereof | |
JPS57113252A (en) | Manufacture of semiconductor device | |
JPS57199237A (en) | Manufacture of semiconductor device | |
JPS54117690A (en) | Production of semiconductor device | |
JPS5643744A (en) | Manufacture of semiconductor device | |
JPS57177542A (en) | Manufacturing method for semiconductor device | |
JPS57196544A (en) | Manufacture of integrated circuit isolated by oxide film | |
JPS57121231A (en) | Manufacture of semiconductor device | |
JPS5797646A (en) | Manufacture of semiconductor device | |
JPS5648151A (en) | Wiring formation of semiconductor device | |
JPS57107040A (en) | Manufacture of semiconductor device | |
JPS5626443A (en) | Manufacture of semiconductor device | |
JPS5529106A (en) | Manufacturing of semiconductor device | |
JPS5710246A (en) | Manufacture of semiconductor device |