JPS5779622A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5779622A JPS5779622A JP15635680A JP15635680A JPS5779622A JP S5779622 A JPS5779622 A JP S5779622A JP 15635680 A JP15635680 A JP 15635680A JP 15635680 A JP15635680 A JP 15635680A JP S5779622 A JPS5779622 A JP S5779622A
- Authority
- JP
- Japan
- Prior art keywords
- film
- outside electrode
- semiconductor device
- adhered
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 238000001035 drying Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 2
- 238000005406 washing Methods 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229960000583 acetic acid Drugs 0.000 abstract 1
- 239000007864 aqueous solution Substances 0.000 abstract 1
- 239000012362 glacial acetic acid Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000000927 vapour-phase epitaxy Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
PURPOSE:To enhance close adhesion between a metal film of semiconductor device and an outside electrode by a method wherein before connection of the metal film to constitute the semiconductor device to the outside electrode is to be performed, etching with a buffer liquid containing fluoric acid, washing with water and drying are repeated to form unevenness on the surface of the metal film. CONSTITUTION:An Al film 21 containing several % of silicon to constitute a metal wiring is adhered on a semiconductor substrate 11 being formed with an element region. Moreover an insulating film 31 is adhered thereon by the vapor phase epitaxy to form a protective film. To attain connection to the outside electrode, a photo resist film 41 is formed selectively, and the silicon oxide film is etched with the buffer liquid consisting of fluoric acid and an aqueous solution of ammonium fluoride or being added thereto glacial acetic acid making the film thereof as a mask. Washing with water and drying are performed after etching is finished. When the progress of work of this manner is repeated, uneven condition of the surface of the Al film 21 can be obtained. The outside electrode is bonded finally to complete connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15635680A JPS5779622A (en) | 1980-11-06 | 1980-11-06 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15635680A JPS5779622A (en) | 1980-11-06 | 1980-11-06 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5779622A true JPS5779622A (en) | 1982-05-18 |
| JPS643336B2 JPS643336B2 (en) | 1989-01-20 |
Family
ID=15625959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15635680A Granted JPS5779622A (en) | 1980-11-06 | 1980-11-06 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5779622A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49107478A (en) * | 1973-02-15 | 1974-10-12 |
-
1980
- 1980-11-06 JP JP15635680A patent/JPS5779622A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49107478A (en) * | 1973-02-15 | 1974-10-12 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS643336B2 (en) | 1989-01-20 |
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