JPS577117A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS577117A JPS577117A JP8160080A JP8160080A JPS577117A JP S577117 A JPS577117 A JP S577117A JP 8160080 A JP8160080 A JP 8160080A JP 8160080 A JP8160080 A JP 8160080A JP S577117 A JPS577117 A JP S577117A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- grooves
- substrate
- scribing lines
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P14/2922—
-
- H10P14/3808—
-
- H10P14/2925—
-
- H10P14/3411—
-
- H10P14/3458—
-
- H10P14/3818—
-
- H10P14/382—
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8160080A JPS577117A (en) | 1980-06-17 | 1980-06-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8160080A JPS577117A (en) | 1980-06-17 | 1980-06-17 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS577117A true JPS577117A (en) | 1982-01-14 |
| JPS629212B2 JPS629212B2 (enExample) | 1987-02-27 |
Family
ID=13750804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8160080A Granted JPS577117A (en) | 1980-06-17 | 1980-06-17 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS577117A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2325342B (en) * | 1997-05-12 | 2000-03-01 | Lg Electronics Inc | Method of crystallizing amorphous silicon layer and method of fabricating a thin film transistor |
-
1980
- 1980-06-17 JP JP8160080A patent/JPS577117A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2325342B (en) * | 1997-05-12 | 2000-03-01 | Lg Electronics Inc | Method of crystallizing amorphous silicon layer and method of fabricating a thin film transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS629212B2 (enExample) | 1987-02-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0036137A1 (en) | Method for production of semiconductor devices | |
| JPS6435405A (en) | Light waveguide mutual connection circuit | |
| JPS57194518A (en) | Manufacture of polycrystalline silicon | |
| KR940001258A (ko) | 다결정 실리콘 박막의 제조방법 | |
| JPS577117A (en) | Manufacture of semiconductor device | |
| JPS5333050A (en) | Production of semiconductor element | |
| JPS57180148A (en) | Manufacture of semiconductor device having dielectric isolation structure | |
| JPS56146247A (en) | Manufacture of semiconductor device | |
| JPS566451A (en) | Deviding method of semiconductor device | |
| JPS5678155A (en) | Semiconductor device and manufacture thereof | |
| JPS56126914A (en) | Manufacture of semiconductor device | |
| JPS5723217A (en) | Manufacture of semiconductor device | |
| JPS5797647A (en) | Forming of electrode wiring in semiconductor device | |
| JPS5635434A (en) | Manufacturing of semiconductor device | |
| JPS575328A (en) | Growing method for semiconductor crystal | |
| JPS5323570A (en) | Forming method of minute conductive regions to semicond uctor element chip surface | |
| JPS575327A (en) | Manufacture of semiconductor device | |
| JPS5766627A (en) | Manufacture of semiconductor device | |
| JPS567434A (en) | Manufacture of semiconductor device | |
| JPS56146231A (en) | Manufacture of semiconductor device | |
| JPS57201015A (en) | Manufacture of semiconductor device | |
| JPS57100721A (en) | Manufacture of semiconductor device | |
| JPS5694622A (en) | Manufacture of semiconductor device | |
| JPS5727078A (en) | Semiconductor device having light receiving element | |
| JPS5779624A (en) | Manufacture of semiconductor device |