JPS5768079A - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JPS5768079A JPS5768079A JP14362680A JP14362680A JPS5768079A JP S5768079 A JPS5768079 A JP S5768079A JP 14362680 A JP14362680 A JP 14362680A JP 14362680 A JP14362680 A JP 14362680A JP S5768079 A JPS5768079 A JP S5768079A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- polysilicon thin
- single crystal
- crystal substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 5
- 229920005591 polysilicon Polymers 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000010408 film Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 239000010409 thin film Substances 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910019213 POCl3 Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
PURPOSE:To detect the pressure difference between an insulating single crystal substrate side a polysilicon thin film side by the variation in the resistance induced by a strain by forming the polysilicon thin film on an insulating film on the insulating single crystal substrate or on a semiconductor substrate. CONSTITUTION:An SiO2 film 2 is formed on the (001) plane of an Si single crystal substrate 1, and a polysilicon thin film 3 is formed in an island. A gate oxidized film 4 is formed by oxidation, polysilicon 5 is superposed, is plasma etched, and a gate region is formed. It is treated in a POCl3 atmosphere to form an N type source 6, a drain 7 and a gate electrode 5. An SiO2 film 8 is covered, a window 9 is opened, an aluminum electrode is attached, and is annealed. With this structure, a sensor having temperature dependency smaller than the conventional one can be obtained, the irregularity between the lot or wafer can be managed only by controlling the thickness of the polysilicon thin film, and the dependency in the variation of the temperature characteritics can be almost eliminated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14362680A JPS5768079A (en) | 1980-10-16 | 1980-10-16 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14362680A JPS5768079A (en) | 1980-10-16 | 1980-10-16 | Semiconductor pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5768079A true JPS5768079A (en) | 1982-04-26 |
| JPS6222540B2 JPS6222540B2 (en) | 1987-05-19 |
Family
ID=15343121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14362680A Granted JPS5768079A (en) | 1980-10-16 | 1980-10-16 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5768079A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5504356A (en) * | 1992-11-16 | 1996-04-02 | Nippondenso Co., Ltd. | Semiconductor accelerometer |
| US5503017A (en) * | 1993-05-21 | 1996-04-02 | Nippondenso Co., Ltd. | Semiconductor acceleration sensor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4831078A (en) * | 1971-08-26 | 1973-04-24 | ||
| JPS54150987A (en) * | 1978-05-18 | 1979-11-27 | Gulton Ind Inc | Strain gauge transducer and method of fabricating same |
-
1980
- 1980-10-16 JP JP14362680A patent/JPS5768079A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4831078A (en) * | 1971-08-26 | 1973-04-24 | ||
| JPS54150987A (en) * | 1978-05-18 | 1979-11-27 | Gulton Ind Inc | Strain gauge transducer and method of fabricating same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5504356A (en) * | 1992-11-16 | 1996-04-02 | Nippondenso Co., Ltd. | Semiconductor accelerometer |
| US5503017A (en) * | 1993-05-21 | 1996-04-02 | Nippondenso Co., Ltd. | Semiconductor acceleration sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6222540B2 (en) | 1987-05-19 |
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