JPS5766625A - Manufacture of film - Google Patents

Manufacture of film

Info

Publication number
JPS5766625A
JPS5766625A JP55142246A JP14224680A JPS5766625A JP S5766625 A JPS5766625 A JP S5766625A JP 55142246 A JP55142246 A JP 55142246A JP 14224680 A JP14224680 A JP 14224680A JP S5766625 A JPS5766625 A JP S5766625A
Authority
JP
Japan
Prior art keywords
reactive
activating chamber
gas
furnace
helium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55142246A
Other languages
English (en)
Japanese (ja)
Other versions
JPH036652B2 (fr
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP55142246A priority Critical patent/JPS5766625A/ja
Publication of JPS5766625A publication Critical patent/JPS5766625A/ja
Publication of JPH036652B2 publication Critical patent/JPH036652B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP55142246A 1980-10-11 1980-10-11 Manufacture of film Granted JPS5766625A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55142246A JPS5766625A (en) 1980-10-11 1980-10-11 Manufacture of film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55142246A JPS5766625A (en) 1980-10-11 1980-10-11 Manufacture of film

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP61310495A Division JPS62169325A (ja) 1986-12-24 1986-12-24 被膜作製方法
JP61310494A Division JPS62169324A (ja) 1986-12-24 1986-12-24 被膜作製方法

Publications (2)

Publication Number Publication Date
JPS5766625A true JPS5766625A (en) 1982-04-22
JPH036652B2 JPH036652B2 (fr) 1991-01-30

Family

ID=15310837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55142246A Granted JPS5766625A (en) 1980-10-11 1980-10-11 Manufacture of film

Country Status (1)

Country Link
JP (1) JPS5766625A (fr)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4532199A (en) * 1983-03-01 1985-07-30 Tokyo Shibaura Denki Kabushiki Kaisha Method of forming amorphous silicon film
US4689093A (en) * 1985-03-28 1987-08-25 Canon Kabushiki Kaisha Process for the preparation of photoelectromotive force member
US4702934A (en) * 1985-03-28 1987-10-27 Canon Kabushiki Kaisha Electrophotographic photosensitive member, process and apparatus for the preparation thereof
US4726963A (en) * 1985-02-19 1988-02-23 Canon Kabushiki Kaisha Process for forming deposited film
US4759947A (en) * 1984-10-08 1988-07-26 Canon Kabushiki Kaisha Method for forming deposition film using Si compound and active species from carbon and halogen compound
US4801468A (en) * 1985-02-25 1989-01-31 Canon Kabushiki Kaisha Process for forming deposited film
US4803093A (en) * 1985-03-27 1989-02-07 Canon Kabushiki Kaisha Process for preparing a functional deposited film
US4808553A (en) * 1985-11-12 1989-02-28 Semiconductor Energy Laboratory Semiconductor device manufacturing method
US4818563A (en) * 1985-02-21 1989-04-04 Canon Kabushiki Kaisha Process for forming deposited film
US4818560A (en) * 1985-12-28 1989-04-04 Canon Kabushiki Kaisha Method for preparation of multi-layer structure film
US4830890A (en) * 1985-12-24 1989-05-16 Canon Kabushiki Kaisha Method for forming a deposited film from a gaseous silane compound heated on a substrate and introducing an active species therewith
US4835005A (en) * 1983-08-16 1989-05-30 Canon Kabushiki Kaishi Process for forming deposition film
US4853251A (en) * 1985-02-22 1989-08-01 Canon Kabushiki Kaisha Process for forming deposited film including carbon as a constituent element
US5244698A (en) * 1985-02-21 1993-09-14 Canon Kabushiki Kaisha Process for forming deposited film

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4532199A (en) * 1983-03-01 1985-07-30 Tokyo Shibaura Denki Kabushiki Kaisha Method of forming amorphous silicon film
US5645947A (en) * 1983-08-16 1997-07-08 Canon Kabushiki Kaisha Silicon-containing deposited film
US4835005A (en) * 1983-08-16 1989-05-30 Canon Kabushiki Kaishi Process for forming deposition film
US4759947A (en) * 1984-10-08 1988-07-26 Canon Kabushiki Kaisha Method for forming deposition film using Si compound and active species from carbon and halogen compound
US4726963A (en) * 1985-02-19 1988-02-23 Canon Kabushiki Kaisha Process for forming deposited film
US4818563A (en) * 1985-02-21 1989-04-04 Canon Kabushiki Kaisha Process for forming deposited film
US5244698A (en) * 1985-02-21 1993-09-14 Canon Kabushiki Kaisha Process for forming deposited film
US4853251A (en) * 1985-02-22 1989-08-01 Canon Kabushiki Kaisha Process for forming deposited film including carbon as a constituent element
US4801468A (en) * 1985-02-25 1989-01-31 Canon Kabushiki Kaisha Process for forming deposited film
US4803093A (en) * 1985-03-27 1989-02-07 Canon Kabushiki Kaisha Process for preparing a functional deposited film
US4798167A (en) * 1985-03-28 1989-01-17 Canon Kabushiki Kaisha Apparatus for preparing a photoelectromotive force member having a concentric triplicate conduit for generating active species and precursor
US4702934A (en) * 1985-03-28 1987-10-27 Canon Kabushiki Kaisha Electrophotographic photosensitive member, process and apparatus for the preparation thereof
US4689093A (en) * 1985-03-28 1987-08-25 Canon Kabushiki Kaisha Process for the preparation of photoelectromotive force member
US4808553A (en) * 1985-11-12 1989-02-28 Semiconductor Energy Laboratory Semiconductor device manufacturing method
US4808554A (en) * 1985-11-12 1989-02-28 Semiconductor Energy Laboratory Semiconductor device manufacturing method
US4830890A (en) * 1985-12-24 1989-05-16 Canon Kabushiki Kaisha Method for forming a deposited film from a gaseous silane compound heated on a substrate and introducing an active species therewith
US4818560A (en) * 1985-12-28 1989-04-04 Canon Kabushiki Kaisha Method for preparation of multi-layer structure film

Also Published As

Publication number Publication date
JPH036652B2 (fr) 1991-01-30

Similar Documents

Publication Publication Date Title
JPS5766625A (en) Manufacture of film
US4624214A (en) Dry-processing apparatus
JPS5578524A (en) Manufacture of semiconductor device
CA2051554A1 (fr) Methode de depot de couche mince
JPS5777021A (en) Manufacture of amorphous silicon
TW287292B (en) Parylene deposition apparatus including an atmospheric shroud and inert gas source
JPS5713174A (en) Reactive sputtering method
IE811017L (en) Chemical vapor deposition of films on silicon wafers
US5225378A (en) Method of forming a phosphorus doped silicon film
IT1234946B (it) Procedimento e dispositivo per diffondere una o una pluralita' di impurita' in un corpo di semiconduttore.
KR960034479A (ko) 산화물박막의 제조방법 및 그것에 사용되는 화학증착장치
JPS56155526A (en) Method of forming film
JPS57158370A (en) Formation of metallic thin film
JPS56123377A (en) Plasma cleaning and etching method
JPS56105480A (en) Plasma etching method
JPS6413718A (en) Method for storing semiconductor substrate
JPS5737824A (en) Method and device for impurity diffusion
JPS5471577A (en) Production of semiconductor device
JPS56156760A (en) Method and apparatus for forming coat
JPS5615045A (en) Formation of pattern
JPS5644763A (en) Cvd device under reduced pressure
JPS5713738A (en) Vapor-phase growing apparatus
JPS56162841A (en) Forming method for insulating film of compound semiconductor
JPS5762537A (en) Forming method for film
JPS57196710A (en) Plasma vapor phase method