JPS5754374A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5754374A
JPS5754374A JP13093480A JP13093480A JPS5754374A JP S5754374 A JPS5754374 A JP S5754374A JP 13093480 A JP13093480 A JP 13093480A JP 13093480 A JP13093480 A JP 13093480A JP S5754374 A JPS5754374 A JP S5754374A
Authority
JP
Japan
Prior art keywords
drain
source
windows
silicon
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13093480A
Other languages
Japanese (ja)
Inventor
Eisuke Ichinohe
Shigero Kuninobu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP13093480A priority Critical patent/JPS5754374A/en
Publication of JPS5754374A publication Critical patent/JPS5754374A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form a contact window to polycrystalline silicon in a self-alignment manner by using two kinds of photo-resist films in the manufacture of the silicon gate MOS type semiconductor integrated circuit. CONSTITUTION:The surface of a substrate, which has a field oxide film 14, to which a source and drain 17 are formed, which has a polycrystal silicon film pattern functioning as a connecting section 16-2 to a gate 16-1, polycrystal wiring and a metallic clectrode, and the surface thereof possesses an oxide film 18, is coated with a negative type photo-resist film 19 in a manner that is thick recessed sections and is thin to protruded sections, and exposed and developed, and openings 20 for collector windows to the source and the drain are shaped. The surface is coated with a positive type photo-resist film 21 and exposed and developed, and the openings 20 for the contact windows to the source and the drain 17 and an opening 22 for a contact window to the polycrystalline silicon are formed, and the contact windows 23, 24 are shaped through etching.
JP13093480A 1980-09-19 1980-09-19 Manufacture of semiconductor device Pending JPS5754374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13093480A JPS5754374A (en) 1980-09-19 1980-09-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13093480A JPS5754374A (en) 1980-09-19 1980-09-19 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5754374A true JPS5754374A (en) 1982-03-31

Family

ID=15046114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13093480A Pending JPS5754374A (en) 1980-09-19 1980-09-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5754374A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0891343A (en) * 1994-09-29 1996-04-09 Gifu Plast Ind Co Ltd Container with pouring port and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0891343A (en) * 1994-09-29 1996-04-09 Gifu Plast Ind Co Ltd Container with pouring port and manufacture thereof

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