JPS5754362A - Handotaisochi - Google Patents

Handotaisochi

Info

Publication number
JPS5754362A
JPS5754362A JP13049680A JP13049680A JPS5754362A JP S5754362 A JPS5754362 A JP S5754362A JP 13049680 A JP13049680 A JP 13049680A JP 13049680 A JP13049680 A JP 13049680A JP S5754362 A JPS5754362 A JP S5754362A
Authority
JP
Japan
Prior art keywords
type
regions
substrate
electrodes
suppressed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13049680A
Other languages
English (en)
Inventor
Tadamichi Masamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13049680A priority Critical patent/JPS5754362A/ja
Publication of JPS5754362A publication Critical patent/JPS5754362A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
JP13049680A 1980-09-19 1980-09-19 Handotaisochi Pending JPS5754362A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13049680A JPS5754362A (ja) 1980-09-19 1980-09-19 Handotaisochi

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13049680A JPS5754362A (ja) 1980-09-19 1980-09-19 Handotaisochi

Publications (1)

Publication Number Publication Date
JPS5754362A true JPS5754362A (ja) 1982-03-31

Family

ID=15035650

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13049680A Pending JPS5754362A (ja) 1980-09-19 1980-09-19 Handotaisochi

Country Status (1)

Country Link
JP (1) JPS5754362A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5428237A (en) * 1991-04-26 1995-06-27 Canon Kabushiki Kaisha Semiconductor device having an insulated gate transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50146276A (ja) * 1974-05-13 1975-11-22

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50146276A (ja) * 1974-05-13 1975-11-22

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5428237A (en) * 1991-04-26 1995-06-27 Canon Kabushiki Kaisha Semiconductor device having an insulated gate transistor

Similar Documents

Publication Publication Date Title
JPS5736844A (en) Semiconductor device
JPS56125868A (en) Thin-film semiconductor device
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS5710268A (en) Semiconductor device
JPS5754362A (ja) Handotaisochi
JPS5691470A (en) Semiconductor
JPS5759384A (en) Manufacture of longitudinal type insulated field effect semiconductor device
JPS575359A (en) Semiconductor device
JPS5632757A (en) Insulated gate type transistor and integrated circuit
JPS56125875A (en) Semiconductor integrated circuit device
JPS5575238A (en) Method of fabricating semiconductor device
JPS55107229A (en) Method of manufacturing semiconductor device
JPS5583267A (en) Method of fabricating semiconductor device
JPS5522878A (en) Insulation gate type field effect semiconductor device
JPS5748248A (en) Manufacture of semiconductor device
JPS5773974A (en) Manufacture of most type semiconductor device
JPS55162270A (en) Semiconductor device
JPS56142672A (en) Semiconductor device and manufacture thereof
JPS5513953A (en) Complementary integrated circuit
JPS567482A (en) Manufacturing of semiconductor device
JPS55102274A (en) Insulated gate field effect transistor
JPS6465875A (en) Thin film transistor and manufacture thereof
JPS56146281A (en) Manufacture of semiconductor integrated circuit
JPS5753958A (ja) Handotaisochi
JPS5789259A (en) Semiconductor device