JPS5754315A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5754315A JPS5754315A JP55130952A JP13095280A JPS5754315A JP S5754315 A JPS5754315 A JP S5754315A JP 55130952 A JP55130952 A JP 55130952A JP 13095280 A JP13095280 A JP 13095280A JP S5754315 A JPS5754315 A JP S5754315A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulated
- diffused
- film
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55130952A JPS5754315A (en) | 1980-09-19 | 1980-09-19 | Preparation of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55130952A JPS5754315A (en) | 1980-09-19 | 1980-09-19 | Preparation of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5754315A true JPS5754315A (en) | 1982-03-31 |
| JPH0119251B2 JPH0119251B2 (enExample) | 1989-04-11 |
Family
ID=15046474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55130952A Granted JPS5754315A (en) | 1980-09-19 | 1980-09-19 | Preparation of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5754315A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59125621A (ja) * | 1982-12-28 | 1984-07-20 | Fujitsu Ltd | 半導体製造装置 |
| JPS63306623A (ja) * | 1987-06-08 | 1988-12-14 | Rohm Co Ltd | 半導体装置のシンタリング方法 |
-
1980
- 1980-09-19 JP JP55130952A patent/JPS5754315A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59125621A (ja) * | 1982-12-28 | 1984-07-20 | Fujitsu Ltd | 半導体製造装置 |
| JPS63306623A (ja) * | 1987-06-08 | 1988-12-14 | Rohm Co Ltd | 半導体装置のシンタリング方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0119251B2 (enExample) | 1989-04-11 |
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