JPS5753928A - Compound semiconductor device - Google Patents

Compound semiconductor device

Info

Publication number
JPS5753928A
JPS5753928A JP12854380A JP12854380A JPS5753928A JP S5753928 A JPS5753928 A JP S5753928A JP 12854380 A JP12854380 A JP 12854380A JP 12854380 A JP12854380 A JP 12854380A JP S5753928 A JPS5753928 A JP S5753928A
Authority
JP
Japan
Prior art keywords
layer
ratio
substrate
interface
transition layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12854380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6232609B2 (enExample
Inventor
Noriyuki Shimano
Yasuhiro Ishii
Yoshimoto Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP12854380A priority Critical patent/JPS5753928A/ja
Publication of JPS5753928A publication Critical patent/JPS5753928A/ja
Publication of JPS6232609B2 publication Critical patent/JPS6232609B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3254—Graded layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP12854380A 1980-09-18 1980-09-18 Compound semiconductor device Granted JPS5753928A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12854380A JPS5753928A (en) 1980-09-18 1980-09-18 Compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12854380A JPS5753928A (en) 1980-09-18 1980-09-18 Compound semiconductor device

Publications (2)

Publication Number Publication Date
JPS5753928A true JPS5753928A (en) 1982-03-31
JPS6232609B2 JPS6232609B2 (enExample) 1987-07-15

Family

ID=14987354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12854380A Granted JPS5753928A (en) 1980-09-18 1980-09-18 Compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5753928A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58191421A (ja) * 1982-05-04 1983-11-08 Nec Corp 化合物半導体成長用基板と化合物半導体の製造方法
JPS61107719A (ja) * 1984-10-31 1986-05-26 Matsushita Electric Ind Co Ltd ３−５化合物単結晶薄膜をそなえたＳｉ基板およびその製造方法
JPH01120012A (ja) * 1987-11-02 1989-05-12 Matsushita Electric Ind Co Ltd 化合物半導体装置
US5011550A (en) * 1987-05-13 1991-04-30 Sharp Kabushiki Kaisha Laminated structure of compound semiconductors

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58191421A (ja) * 1982-05-04 1983-11-08 Nec Corp 化合物半導体成長用基板と化合物半導体の製造方法
JPS61107719A (ja) * 1984-10-31 1986-05-26 Matsushita Electric Ind Co Ltd ３−５化合物単結晶薄膜をそなえたＳｉ基板およびその製造方法
US5011550A (en) * 1987-05-13 1991-04-30 Sharp Kabushiki Kaisha Laminated structure of compound semiconductors
JPH01120012A (ja) * 1987-11-02 1989-05-12 Matsushita Electric Ind Co Ltd 化合物半導体装置

Also Published As

Publication number Publication date
JPS6232609B2 (enExample) 1987-07-15

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