JPS575382A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS575382A JPS575382A JP7955580A JP7955580A JPS575382A JP S575382 A JPS575382 A JP S575382A JP 7955580 A JP7955580 A JP 7955580A JP 7955580 A JP7955580 A JP 7955580A JP S575382 A JPS575382 A JP S575382A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- layer
- forming
- semiconductor laser
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2238—Buried stripe structure with a terraced structure
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7955580A JPS575382A (en) | 1980-06-11 | 1980-06-11 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7955580A JPS575382A (en) | 1980-06-11 | 1980-06-11 | Semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS575382A true JPS575382A (en) | 1982-01-12 |
JPS6214958B2 JPS6214958B2 (ja) | 1987-04-04 |
Family
ID=13693245
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7955580A Granted JPS575382A (en) | 1980-06-11 | 1980-06-11 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS575382A (ja) |
-
1980
- 1980-06-11 JP JP7955580A patent/JPS575382A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6214958B2 (ja) | 1987-04-04 |
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