JPS6432640A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To reduce the reverse leakage currents of the peripheral section of a shallow impurity diffusion layer, and to improve the reliability of a device by incorporating fluorine atoms into a semiconductor substrate in the periphery of the impurity diffusion layer or a structure formed to the main surface of the semiconductor substrate. CONSTITUTION:Layers 5 containing fluorine atoms are shaped to a semiconductor substrate 3 in the peripheral section 2 of an impurity diffusion layer 1 formed or a structure 4 shaped to the main surface of the substrate 3. The layers 5 including fluorine atoms have an effect on generating and recombining components 9 in the surface in each component of leakage currents. Traps on the interface can be decreased by fluorine in the layers 5 containing fluorine atoms, and the stress of the structure 4 can be reduced by mixing fluorine, thus reducing the whole trap density. Consequently, the leakage currents of the generating and recombining components 9 in the surface are diminished. Accordingly, the reliability of a device can be improved.