JPS54100274A - Complementary mos integrated circuit device - Google Patents
Complementary mos integrated circuit deviceInfo
- Publication number
- JPS54100274A JPS54100274A JP641178A JP641178A JPS54100274A JP S54100274 A JPS54100274 A JP S54100274A JP 641178 A JP641178 A JP 641178A JP 641178 A JP641178 A JP 641178A JP S54100274 A JPS54100274 A JP S54100274A
- Authority
- JP
- Japan
- Prior art keywords
- region
- groove
- substrate
- type
- channels
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To reduce the border region between two channels and thus to increase the density by forming a groove of 2∼10μm depth and 1∼20μm width through etching between the P and N channels on the Si single-crystal substrate.
CONSTITUTION: Groove 8 is formed through etching on Si substrate 7 with the depth of 2∼10μm and the width of 1∼20μm, and P--type region 9 is formed on substrate 7 of one side to hold groove 8 between. In such way, region 9 never extends owing to existence of groove 8 when the drive-in is given at the formation of region 9. Then P+-type stopper region 10 is formed at the bottom of groove 8, and N+-type stopper region 11 is formed on substrate 7 of the other side holding groove 8 between. P+-type layer 13 is formed through diffusion near region 11, and at the same time N+-type region 12 is formed within region 9. As a result, the two channels can be put close to each other, and region 11 can be omitted if groove 8 is filled with insulator material 14.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP641178A JPS54100274A (en) | 1978-01-24 | 1978-01-24 | Complementary mos integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP641178A JPS54100274A (en) | 1978-01-24 | 1978-01-24 | Complementary mos integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54100274A true JPS54100274A (en) | 1979-08-07 |
Family
ID=11637618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP641178A Pending JPS54100274A (en) | 1978-01-24 | 1978-01-24 | Complementary mos integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54100274A (en) |
-
1978
- 1978-01-24 JP JP641178A patent/JPS54100274A/en active Pending
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