JPS5750431A - Forming method for minute pattern - Google Patents

Forming method for minute pattern

Info

Publication number
JPS5750431A
JPS5750431A JP55125779A JP12577980A JPS5750431A JP S5750431 A JPS5750431 A JP S5750431A JP 55125779 A JP55125779 A JP 55125779A JP 12577980 A JP12577980 A JP 12577980A JP S5750431 A JPS5750431 A JP S5750431A
Authority
JP
Japan
Prior art keywords
film
pattern
polysilicon film
oxide film
forming method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55125779A
Other languages
English (en)
Inventor
Tadahiro Takigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55125779A priority Critical patent/JPS5750431A/ja
Publication of JPS5750431A publication Critical patent/JPS5750431A/ja
Pending legal-status Critical Current

Links

Classifications

    • H10P95/00—

Landscapes

  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP55125779A 1980-09-10 1980-09-10 Forming method for minute pattern Pending JPS5750431A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55125779A JPS5750431A (en) 1980-09-10 1980-09-10 Forming method for minute pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55125779A JPS5750431A (en) 1980-09-10 1980-09-10 Forming method for minute pattern

Publications (1)

Publication Number Publication Date
JPS5750431A true JPS5750431A (en) 1982-03-24

Family

ID=14918626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55125779A Pending JPS5750431A (en) 1980-09-10 1980-09-10 Forming method for minute pattern

Country Status (1)

Country Link
JP (1) JPS5750431A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61173252A (ja) * 1985-01-28 1986-08-04 Mitsubishi Electric Corp フォトマスクブランクの形成方法
JPH02502596A (ja) * 1987-12-19 1990-08-16 ミテル　セミコンダクター　リミテッド 半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51127680A (en) * 1975-04-28 1976-11-06 Toshiba Corp Manufacturing process of semiconductor device
JPS5526619A (en) * 1978-08-15 1980-02-26 Toshiba Corp Method of producing semiconductor device
JPS5578546A (en) * 1978-12-11 1980-06-13 Toshiba Corp Manufacture of semiconductor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51127680A (en) * 1975-04-28 1976-11-06 Toshiba Corp Manufacturing process of semiconductor device
JPS5526619A (en) * 1978-08-15 1980-02-26 Toshiba Corp Method of producing semiconductor device
JPS5578546A (en) * 1978-12-11 1980-06-13 Toshiba Corp Manufacture of semiconductor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61173252A (ja) * 1985-01-28 1986-08-04 Mitsubishi Electric Corp フォトマスクブランクの形成方法
JPH02502596A (ja) * 1987-12-19 1990-08-16 ミテル　セミコンダクター　リミテッド 半導体装置の製造方法

Similar Documents

Publication Publication Date Title
JPS5694646A (en) Forming method for oxidized film
JPS5750431A (en) Forming method for minute pattern
JPS55158636A (en) Photo-mask for semiconductor device
JPS5687343A (en) Forming method of wiring
JPS57111028A (en) Etching method for gap
JPS557474A (en) Forming method for film resistor of thermal recording head
JPS57152968A (en) Manufacture of thermal head
JPS57148371A (en) Manufacture of mesa type semiconductor device
JPS56115534A (en) Formation of pattern
JPS52130575A (en) Semiconductor device and its preparation
JPS5731146A (en) Manufacture of semiconductor device
JPS5314555A (en) Depositing method of impurity to silicon wafersa
JPS57128950A (en) Manufacture ot of thin film element
JPS55115365A (en) Manufacturing method of charge transfer unit
JPS57118641A (en) Lifting-off method
JPS5626442A (en) Method for pattern formation
JPS645061A (en) Manufacture of image sensor
JPS56150829A (en) Manufacture of aperture iris
JPS55166925A (en) Application of metal film on semiconductor substrate
JPS5690539A (en) Production of semiconductor device
JPS5533090A (en) Etching method
JPS57180126A (en) Pattern formation on aluminum thin film
JPS5670966A (en) Ink jet head and production thereof
JPS55134935A (en) Preparation of semiconductor element
JPS56137623A (en) Forming of cross pattern electrode