JPS5745972A - High frequency high power transistor - Google Patents

High frequency high power transistor

Info

Publication number
JPS5745972A
JPS5745972A JP55121516A JP12151680A JPS5745972A JP S5745972 A JPS5745972 A JP S5745972A JP 55121516 A JP55121516 A JP 55121516A JP 12151680 A JP12151680 A JP 12151680A JP S5745972 A JPS5745972 A JP S5745972A
Authority
JP
Japan
Prior art keywords
region
temperature
emitter
base
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55121516A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6348193B2 (https=
Inventor
Yoshiharu Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55121516A priority Critical patent/JPS5745972A/ja
Publication of JPS5745972A publication Critical patent/JPS5745972A/ja
Publication of JPS6348193B2 publication Critical patent/JPS6348193B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP55121516A 1980-09-02 1980-09-02 High frequency high power transistor Granted JPS5745972A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55121516A JPS5745972A (en) 1980-09-02 1980-09-02 High frequency high power transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55121516A JPS5745972A (en) 1980-09-02 1980-09-02 High frequency high power transistor

Publications (2)

Publication Number Publication Date
JPS5745972A true JPS5745972A (en) 1982-03-16
JPS6348193B2 JPS6348193B2 (https=) 1988-09-28

Family

ID=14813137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55121516A Granted JPS5745972A (en) 1980-09-02 1980-09-02 High frequency high power transistor

Country Status (1)

Country Link
JP (1) JPS5745972A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113760033A (zh) * 2021-09-08 2021-12-07 中国电子科技集团公司第二十四研究所 电压基准芯片的封装结构及输出电压温度补偿方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946112A (https=) * 1972-09-11 1974-05-02
JPS5023177A (https=) * 1973-06-28 1975-03-12
JPS5198987A (https=) * 1975-02-26 1976-08-31

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946112A (https=) * 1972-09-11 1974-05-02
JPS5023177A (https=) * 1973-06-28 1975-03-12
JPS5198987A (https=) * 1975-02-26 1976-08-31

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113760033A (zh) * 2021-09-08 2021-12-07 中国电子科技集团公司第二十四研究所 电压基准芯片的封装结构及输出电压温度补偿方法

Also Published As

Publication number Publication date
JPS6348193B2 (https=) 1988-09-28

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