JPS5745274A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5745274A
JPS5745274A JP55120188A JP12018880A JPS5745274A JP S5745274 A JPS5745274 A JP S5745274A JP 55120188 A JP55120188 A JP 55120188A JP 12018880 A JP12018880 A JP 12018880A JP S5745274 A JPS5745274 A JP S5745274A
Authority
JP
Japan
Prior art keywords
sbd
type
layer
buried layer
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55120188A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6356708B2 (enrdf_load_stackoverflow
Inventor
Takeshi Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55120188A priority Critical patent/JPS5745274A/ja
Publication of JPS5745274A publication Critical patent/JPS5745274A/ja
Publication of JPS6356708B2 publication Critical patent/JPS6356708B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP55120188A 1980-08-30 1980-08-30 Semiconductor device Granted JPS5745274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55120188A JPS5745274A (en) 1980-08-30 1980-08-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55120188A JPS5745274A (en) 1980-08-30 1980-08-30 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5745274A true JPS5745274A (en) 1982-03-15
JPS6356708B2 JPS6356708B2 (enrdf_load_stackoverflow) 1988-11-09

Family

ID=14780082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55120188A Granted JPS5745274A (en) 1980-08-30 1980-08-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5745274A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119762A (ja) * 1982-12-20 1984-07-11 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン 埋込シヨツトキ−クランプ型トランジスタ
JPS59177961A (ja) * 1983-03-28 1984-10-08 Fujitsu Ltd 半導体装置の製造方法
JPH0194659A (ja) * 1987-10-05 1989-04-13 Nec Corp バイポーラ型半導体集積回路装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5531384B2 (ja) * 2007-12-14 2014-06-25 サンケン電気株式会社 複合半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4930320A (enrdf_load_stackoverflow) * 1972-07-14 1974-03-18

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4930320A (enrdf_load_stackoverflow) * 1972-07-14 1974-03-18

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119762A (ja) * 1982-12-20 1984-07-11 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン 埋込シヨツトキ−クランプ型トランジスタ
JPS59177961A (ja) * 1983-03-28 1984-10-08 Fujitsu Ltd 半導体装置の製造方法
JPH0194659A (ja) * 1987-10-05 1989-04-13 Nec Corp バイポーラ型半導体集積回路装置

Also Published As

Publication number Publication date
JPS6356708B2 (enrdf_load_stackoverflow) 1988-11-09

Similar Documents

Publication Publication Date Title
GB1301345A (enrdf_load_stackoverflow)
JPS5586151A (en) Manufacture of semiconductor integrated circuit
MY108622A (en) Semiconductor device with shottky junction.
JPS5745274A (en) Semiconductor device
JPS57162365A (en) Semiconductor device
JPS57201070A (en) Semiconductor device
JPS5674959A (en) Semiconductor memroy
JPS57166068A (en) Semiconductor device
JPS5473585A (en) Gate turn-off thyristor
JPS5499580A (en) Semiconductor integrated circuit device
JPS5785266A (en) Zener diode
JPS56108255A (en) Semiconductor integrated circuit
JPS6490561A (en) Semiconductor device
JPS5730366A (en) Schottky transistor and manufacture thereof
JPS56148862A (en) Semiconductor device
JPS56126960A (en) Manufacture of semiconductor device
JPS56135965A (en) Semiconductor device
JPS57157567A (en) Vertical type p-n-p transistor
JPS5632763A (en) Semiconductor device
JPS57157566A (en) Semiconductor device
JPS575358A (en) Semiconductor device and manufacture thereof
JPS5710968A (en) Semiconductor device
JPS5749249A (en) Semiconductor integrated circuit device
JPS5683968A (en) Semiconductor integrated circuit device
JPS574173A (en) Semiconductor device