JPS57106085A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57106085A JPS57106085A JP18251180A JP18251180A JPS57106085A JP S57106085 A JPS57106085 A JP S57106085A JP 18251180 A JP18251180 A JP 18251180A JP 18251180 A JP18251180 A JP 18251180A JP S57106085 A JPS57106085 A JP S57106085A
- Authority
- JP
- Japan
- Prior art keywords
- sbd
- region
- periphery
- diode
- reverse direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000004888 barrier function Effects 0.000 abstract 2
- 230000007423 decrease Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To enable a device to realize a high speed operation and to obtain a high integration, by a method wherein a Schottky barrier diode is used as a clamp diode for a transistor base and a collector, and a base contacting the periphery of the diode forms a guard ring. CONSTITUTION:A P type region 102 is selectively mounted on a n type semiconductor substrate 101, and a Schottky barrier diode SBD, having a junction surface 105 ranging from the bottom of the region 102 to the inside of a region 101, is formed. A P-N junction, consistig of the region 101 and 102, is formed at a periphery 106 of the SBD, and thereby a reverse direction leak current at the periphery of the SBD decreases, resulting in improving the reverse direction property of the SBD.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18251180A JPS57106085A (en) | 1980-12-23 | 1980-12-23 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18251180A JPS57106085A (en) | 1980-12-23 | 1980-12-23 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57106085A true JPS57106085A (en) | 1982-07-01 |
Family
ID=16119571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18251180A Pending JPS57106085A (en) | 1980-12-23 | 1980-12-23 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57106085A (en) |
-
1980
- 1980-12-23 JP JP18251180A patent/JPS57106085A/en active Pending
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