JPS5743427A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5743427A
JPS5743427A JP55119963A JP11996380A JPS5743427A JP S5743427 A JPS5743427 A JP S5743427A JP 55119963 A JP55119963 A JP 55119963A JP 11996380 A JP11996380 A JP 11996380A JP S5743427 A JPS5743427 A JP S5743427A
Authority
JP
Japan
Prior art keywords
wafer
jig
phenyl salicylate
semiconductor device
heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55119963A
Other languages
Japanese (ja)
Other versions
JPS6145377B2 (en
Inventor
Mitsuo Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55119963A priority Critical patent/JPS5743427A/en
Publication of JPS5743427A publication Critical patent/JPS5743427A/en
Publication of JPS6145377B2 publication Critical patent/JPS6145377B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE:To reduce the irregularity in the thickness of a semiconductor wafer without producing residue in a manufacturing method for a semiconductor device by the steps of adhering the wafer on a jig and then machining the wafer to a necessary thickness by employing phenyl salicylate to adhere the wafer to the jig. CONSTITUTION:A disc-shaped jig 1 is heated on a hot plate, phenyl salicylate 4 is dropped in suitable quantity, is then dissolved, and is spread in size larger than the wafer. Then, the wafer 2 is placed on the phenyl salicylate 4, is removed together with the jig 1 from the hot plate, is naturally cooled, a suitable weight 6 is placed on filter paper 5 on the wafer 2, and the wafer 2 is adhered to the jig 1. Thereafer, the wafer 2 is lapped and cut, is then heated to dissolve the phenyl salicylate 4, and the wafer 2 is removed from the jig 1. Then, the wafer 2 is cleaned with a solvent.
JP55119963A 1980-08-28 1980-08-28 Manufacture of semiconductor device Granted JPS5743427A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55119963A JPS5743427A (en) 1980-08-28 1980-08-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55119963A JPS5743427A (en) 1980-08-28 1980-08-28 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5743427A true JPS5743427A (en) 1982-03-11
JPS6145377B2 JPS6145377B2 (en) 1986-10-07

Family

ID=14774527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55119963A Granted JPS5743427A (en) 1980-08-28 1980-08-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5743427A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003060032A1 (en) * 2002-01-10 2003-07-24 Api Corporation Heat-sensitive pressure-sensitive adhesive composition

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0653514U (en) * 1992-12-22 1994-07-22 株式会社アマダ Product storage device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003060032A1 (en) * 2002-01-10 2003-07-24 Api Corporation Heat-sensitive pressure-sensitive adhesive composition

Also Published As

Publication number Publication date
JPS6145377B2 (en) 1986-10-07

Similar Documents

Publication Publication Date Title
IL64058A0 (en) Process and apparatus for forming a layer of mercury cadmium telluride on a substrate
JPS5743427A (en) Manufacture of semiconductor device
EP0094302A3 (en) A method of removing impurities from semiconductor wafers
ES8101851A1 (en) Cutter for blocks of wafers
JPS5745929A (en) Grinding method for semiconductor wafer
JPS54133150A (en) Adhesion method of polarizing film in liquid crystal cell
JPS5737836A (en) Manufacture of semiconductor device
JPS57143844A (en) Chip composition of wafer
JPS57147241A (en) Bonding method for crystal wafer
MY103194A (en) Method and apparatus for manufacturing blind material
JPS5728689A (en) Method for diffusion joining
JPS56133843A (en) Probe grinder for probe card
JPS56114353A (en) Method of separating semiconductor wafer and wafer fixing plate
JPS5419624A (en) Adhering method of adhesive tape
JPS5380157A (en) Manufacture of semiconductor device
JPS6414007A (en) Deburring method and device therefor
JPS5593229A (en) Manufacture of semiconductor device
JPS574131A (en) Device for mounting of semiconductor chips
JPS56125228A (en) Bonding between metal and glass
JPS5586135A (en) Preparation of semiconductor device
JPS5714488A (en) Ultrasonic depositing method
JPS5262589A (en) Seal-packaging method using ultra-thin film
JPS5618412A (en) Manufacture of semiconductor element
JPS55135320A (en) Manufacture of magnetic head
JPS5694638A (en) Method and device for bonding of pellet