JPS5740940A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5740940A
JPS5740940A JP55116648A JP11664880A JPS5740940A JP S5740940 A JPS5740940 A JP S5740940A JP 55116648 A JP55116648 A JP 55116648A JP 11664880 A JP11664880 A JP 11664880A JP S5740940 A JPS5740940 A JP S5740940A
Authority
JP
Japan
Prior art keywords
semiconductor device
epitaxial
layer
manufacturing yield
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55116648A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6230692B2 (OSRAM
Inventor
Yoshiyuki Shibamata
Masamichi Yoshida
Yunosuke Kawabe
Yutaka Tabata
Tsunenori Yamauchi
Atsuo Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55116648A priority Critical patent/JPS5740940A/ja
Publication of JPS5740940A publication Critical patent/JPS5740940A/ja
Publication of JPS6230692B2 publication Critical patent/JPS6230692B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P95/90—
JP55116648A 1980-08-25 1980-08-25 Semiconductor device Granted JPS5740940A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55116648A JPS5740940A (en) 1980-08-25 1980-08-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55116648A JPS5740940A (en) 1980-08-25 1980-08-25 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5740940A true JPS5740940A (en) 1982-03-06
JPS6230692B2 JPS6230692B2 (OSRAM) 1987-07-03

Family

ID=14692421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55116648A Granted JPS5740940A (en) 1980-08-25 1980-08-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5740940A (OSRAM)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935488A (ja) * 1982-08-24 1984-02-27 Semiconductor Energy Lab Co Ltd 半導体装置
JPS63111380A (ja) * 1987-02-06 1988-05-16 Nippon Boorubarubu Kk ボ−ルバルブ
JPS63111379A (ja) * 1986-10-25 1988-05-16 Nippon Boorubarubu Kk ボ−ルバルブ
US5710967A (en) * 1996-07-12 1998-01-20 Ricoh Company, Ltd. Apparatus which indicates to a user the proper placement of pages to be scanned
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS=1979 *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935488A (ja) * 1982-08-24 1984-02-27 Semiconductor Energy Lab Co Ltd 半導体装置
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
JPS63111379A (ja) * 1986-10-25 1988-05-16 Nippon Boorubarubu Kk ボ−ルバルブ
JPS63111380A (ja) * 1987-02-06 1988-05-16 Nippon Boorubarubu Kk ボ−ルバルブ
US5710967A (en) * 1996-07-12 1998-01-20 Ricoh Company, Ltd. Apparatus which indicates to a user the proper placement of pages to be scanned

Also Published As

Publication number Publication date
JPS6230692B2 (OSRAM) 1987-07-03

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