JPS5737877A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5737877A JPS5737877A JP11416780A JP11416780A JPS5737877A JP S5737877 A JPS5737877 A JP S5737877A JP 11416780 A JP11416780 A JP 11416780A JP 11416780 A JP11416780 A JP 11416780A JP S5737877 A JPS5737877 A JP S5737877A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- make
- ion
- substrate
- mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11416780A JPS5737877A (en) | 1980-08-20 | 1980-08-20 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11416780A JPS5737877A (en) | 1980-08-20 | 1980-08-20 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5737877A true JPS5737877A (en) | 1982-03-02 |
Family
ID=14630841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11416780A Pending JPS5737877A (en) | 1980-08-20 | 1980-08-20 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5737877A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6011292A (en) * | 1989-09-11 | 2000-01-04 | Kabushiki Kaisha Toshiba | Semiconductor device having an alignment mark |
-
1980
- 1980-08-20 JP JP11416780A patent/JPS5737877A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6011292A (en) * | 1989-09-11 | 2000-01-04 | Kabushiki Kaisha Toshiba | Semiconductor device having an alignment mark |
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