JPS5735371A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5735371A
JPS5735371A JP11125280A JP11125280A JPS5735371A JP S5735371 A JPS5735371 A JP S5735371A JP 11125280 A JP11125280 A JP 11125280A JP 11125280 A JP11125280 A JP 11125280A JP S5735371 A JPS5735371 A JP S5735371A
Authority
JP
Japan
Prior art keywords
layer
polysilicon layer
semiconductor substrate
electrode
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11125280A
Other languages
Japanese (ja)
Inventor
Tomio Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11125280A priority Critical patent/JPS5735371A/en
Publication of JPS5735371A publication Critical patent/JPS5735371A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Abstract

PURPOSE:To facilitate the control to a fine resistance value, by providing a taking out electrode, one end of which is contacted with a semiconductor element region on the surface of a semiconductor substrate and which is extended over the surface of the semiconductor substrate, providing a one conductive type, polycrystal silicon, resistance layer in the middle of said electrode, and controlling the time of ion implantation. CONSTITUTION:An emitter region 13 and a base region 12 are formed in a collector region 11 in the one conductive type semiconductor substrate. A hole for taking out the electrode is formed in an oxide film 10 on the surface, and a polysilicon layer 14 is formed. Then, the polysilicon layer 14, other than that part of polysilicon layer 14' which is to become ballast resistor part is removed, with a photoresist film 18 as a mask. Then a platinum layer on the polysilicon layer is removed, and a platinum silicide layer 19 is formed.
JP11125280A 1980-08-13 1980-08-13 Semiconductor device Pending JPS5735371A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11125280A JPS5735371A (en) 1980-08-13 1980-08-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11125280A JPS5735371A (en) 1980-08-13 1980-08-13 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5735371A true JPS5735371A (en) 1982-02-25

Family

ID=14556458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11125280A Pending JPS5735371A (en) 1980-08-13 1980-08-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5735371A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01256711A (en) * 1988-04-06 1989-10-13 Koukou Enjiniaringushiya:Kk Gas burner

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01256711A (en) * 1988-04-06 1989-10-13 Koukou Enjiniaringushiya:Kk Gas burner

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