JPS5735859A - Formation of mask - Google Patents

Formation of mask

Info

Publication number
JPS5735859A
JPS5735859A JP11034380A JP11034380A JPS5735859A JP S5735859 A JPS5735859 A JP S5735859A JP 11034380 A JP11034380 A JP 11034380A JP 11034380 A JP11034380 A JP 11034380A JP S5735859 A JPS5735859 A JP S5735859A
Authority
JP
Japan
Prior art keywords
layer
chromium
ion beam
mask
lens system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11034380A
Other languages
Japanese (ja)
Inventor
Akira Miura
Tsukasa Tada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11034380A priority Critical patent/JPS5735859A/en
Publication of JPS5735859A publication Critical patent/JPS5735859A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To form a hard mask of high accuracy free from pinholelike defects by selectively irradiating a chromium layer prepared on a substrate with alkali metallic ion beam and treating the layer with an acidic etching soln. CONSTITUTION:A glass substrate having a chromium or chromium oxide layer 6 is mounted on a sample table 7 and selectively irradiated with alkali metallic ion beam 1 from an ion beam system composed of an electrostatic lens system 2, an aperture 3, a deflecting electrode 4 and an electrostatic object lens system 5 to form a latent image on the layer 6. The layer 6 is then treated with an acidic etching soln. contg. ammonium cerium nitrate to remove the irradiated part of the layer 6 by etching, thus obtaining a hard chromium mask.
JP11034380A 1980-08-13 1980-08-13 Formation of mask Pending JPS5735859A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11034380A JPS5735859A (en) 1980-08-13 1980-08-13 Formation of mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11034380A JPS5735859A (en) 1980-08-13 1980-08-13 Formation of mask

Publications (1)

Publication Number Publication Date
JPS5735859A true JPS5735859A (en) 1982-02-26

Family

ID=14533343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11034380A Pending JPS5735859A (en) 1980-08-13 1980-08-13 Formation of mask

Country Status (1)

Country Link
JP (1) JPS5735859A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6462618A (en) * 1987-09-02 1989-03-09 Matsushita Electric Ind Co Ltd Production of metallic wiring and production of thin film transistor array
JPH0296159A (en) * 1988-10-03 1990-04-06 Sanyo Electric Co Ltd Production of mask for photolithography
WO2003053570A1 (en) 2001-12-21 2003-07-03 Asahi Kasei Chemicals Corporation Oxide catalyst composition

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6462618A (en) * 1987-09-02 1989-03-09 Matsushita Electric Ind Co Ltd Production of metallic wiring and production of thin film transistor array
JPH0296159A (en) * 1988-10-03 1990-04-06 Sanyo Electric Co Ltd Production of mask for photolithography
WO2003053570A1 (en) 2001-12-21 2003-07-03 Asahi Kasei Chemicals Corporation Oxide catalyst composition

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