JPS6462618A - Production of metallic wiring and production of thin film transistor array - Google Patents

Production of metallic wiring and production of thin film transistor array

Info

Publication number
JPS6462618A
JPS6462618A JP62219545A JP21954587A JPS6462618A JP S6462618 A JPS6462618 A JP S6462618A JP 62219545 A JP62219545 A JP 62219545A JP 21954587 A JP21954587 A JP 21954587A JP S6462618 A JPS6462618 A JP S6462618A
Authority
JP
Japan
Prior art keywords
metal layer
production
thin film
film transistor
transistor array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62219545A
Other languages
Japanese (ja)
Other versions
JP2781383B2 (en
Inventor
Hiroshi Tsutsu
Tetsuya Kawamura
Ikunori Kobayashi
Yutaka Miyata
Yoshiya Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62219545A priority Critical patent/JP2781383B2/en
Publication of JPS6462618A publication Critical patent/JPS6462618A/en
Application granted granted Critical
Publication of JP2781383B2 publication Critical patent/JP2781383B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To obtain metallic wirings and thin film transistor array in high yield with scarce defects of electrical connection by removing oxide from a first metal layer after forming an opening, then forming a second metal layer selectively. CONSTITUTION:An opening part 4 is formed in a silicon nitride layer 9 on a scanning signal line 2 (first metal layer) at an end of a thin film transistor array, then a second metal layer 6 is dipped in a Cr-oxide etching soln. before it is formed selectively. After removing the Cr oxide, the second metal layer 6 is coated selectively. By this constitution, a metallic wiring and a thin film transistor are produced in high yield since defects of electrical connection of the first metal layer Cr 2 and the second metal layer 5 which serves also as an output electrode of a scanning signal line are reduced.
JP62219545A 1987-09-02 1987-09-02 Method for manufacturing thin film transistor array Expired - Fee Related JP2781383B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62219545A JP2781383B2 (en) 1987-09-02 1987-09-02 Method for manufacturing thin film transistor array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62219545A JP2781383B2 (en) 1987-09-02 1987-09-02 Method for manufacturing thin film transistor array

Publications (2)

Publication Number Publication Date
JPS6462618A true JPS6462618A (en) 1989-03-09
JP2781383B2 JP2781383B2 (en) 1998-07-30

Family

ID=16737177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62219545A Expired - Fee Related JP2781383B2 (en) 1987-09-02 1987-09-02 Method for manufacturing thin film transistor array

Country Status (1)

Country Link
JP (1) JP2781383B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6057904A (en) * 1996-10-29 2000-05-02 Lg Electronics, Inc. Insulating layer arrangements for liquid crystal display and fabricating method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55161641A (en) * 1979-06-04 1980-12-16 Tokyo Shibaura Electric Co Product in alloy member* whose principal ingredient is chrome and whose surface is coated* and its coating method
JPS5735859A (en) * 1980-08-13 1982-02-26 Toshiba Corp Formation of mask
JPS6266665A (en) * 1985-09-19 1987-03-26 Toshiba Corp Manufacture of driving circuit substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55161641A (en) * 1979-06-04 1980-12-16 Tokyo Shibaura Electric Co Product in alloy member* whose principal ingredient is chrome and whose surface is coated* and its coating method
JPS5735859A (en) * 1980-08-13 1982-02-26 Toshiba Corp Formation of mask
JPS6266665A (en) * 1985-09-19 1987-03-26 Toshiba Corp Manufacture of driving circuit substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6057904A (en) * 1996-10-29 2000-05-02 Lg Electronics, Inc. Insulating layer arrangements for liquid crystal display and fabricating method thereof

Also Published As

Publication number Publication date
JP2781383B2 (en) 1998-07-30

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees