JPS6421942A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6421942A JPS6421942A JP17720187A JP17720187A JPS6421942A JP S6421942 A JPS6421942 A JP S6421942A JP 17720187 A JP17720187 A JP 17720187A JP 17720187 A JP17720187 A JP 17720187A JP S6421942 A JPS6421942 A JP S6421942A
- Authority
- JP
- Japan
- Prior art keywords
- film
- conducting
- tungsten
- replaced
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain a method of forming the electrode wiring having an excellent close-contact property, a low resistance value and few irregularities on the surface by a method wherein an Si film is formed on a substrate having an insulating film, and substantially the whole of the Si film is replaced with at least a kind of metal of W and Mo by conducting a vapor-phase reaction using at least of one WF6 and MoF6. CONSTITUTION:After a silicon film 3 has been formed at least on a part of a substrate 1 having insulating films 2 and 2', substantially the whole of the silicon film 3 is replaced at least with a kind of tungsten and molybdenum by conducting a vapor-phase reaction using at least one of tungsten hexafluoride and molybdenum hexafkuoride. For example, on the field oxide film 2 and the gate oxide film 2' formed on the surface of the silicon crystal substrate 1 by conducting an LOCOS process, a polycrystalline silicon film 3 is deposited using a low pressure CVD method. Subsequently, the polycrystalline silicon film 3 is entirely replaced with a tungsten film 4 by conducting a low pressure CVD method using WF6 and N2. Then, the above-mentioned tungsten film 4 is processed into an electrode wiring shape by conducting dry etching using SF6.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17720187A JPS6421942A (en) | 1987-07-17 | 1987-07-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17720187A JPS6421942A (en) | 1987-07-17 | 1987-07-17 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6421942A true JPS6421942A (en) | 1989-01-25 |
Family
ID=16026943
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17720187A Pending JPS6421942A (en) | 1987-07-17 | 1987-07-17 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6421942A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01183116A (en) * | 1988-01-18 | 1989-07-20 | Koujiyundo Kagaku Kenkyusho:Kk | Method of forming multi-layer electrode |
JPH02304928A (en) * | 1989-05-19 | 1990-12-18 | Nec Corp | Forming method of wiring |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5075769A (en) * | 1973-11-07 | 1975-06-21 | ||
JPS6110233A (en) * | 1984-06-02 | 1986-01-17 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS62114276A (en) * | 1985-11-14 | 1987-05-26 | Oki Electric Ind Co Ltd | Manufacture of semiconductor element |
JPS62118525A (en) * | 1985-11-19 | 1987-05-29 | Matsushita Electronics Corp | Manufacture of semiconductor device |
-
1987
- 1987-07-17 JP JP17720187A patent/JPS6421942A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5075769A (en) * | 1973-11-07 | 1975-06-21 | ||
JPS6110233A (en) * | 1984-06-02 | 1986-01-17 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS62114276A (en) * | 1985-11-14 | 1987-05-26 | Oki Electric Ind Co Ltd | Manufacture of semiconductor element |
JPS62118525A (en) * | 1985-11-19 | 1987-05-29 | Matsushita Electronics Corp | Manufacture of semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01183116A (en) * | 1988-01-18 | 1989-07-20 | Koujiyundo Kagaku Kenkyusho:Kk | Method of forming multi-layer electrode |
JPH02304928A (en) * | 1989-05-19 | 1990-12-18 | Nec Corp | Forming method of wiring |
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