JPS6421942A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6421942A
JPS6421942A JP17720187A JP17720187A JPS6421942A JP S6421942 A JPS6421942 A JP S6421942A JP 17720187 A JP17720187 A JP 17720187A JP 17720187 A JP17720187 A JP 17720187A JP S6421942 A JPS6421942 A JP S6421942A
Authority
JP
Japan
Prior art keywords
film
conducting
tungsten
replaced
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17720187A
Other languages
Japanese (ja)
Inventor
Nobuyoshi Kobayashi
Masayoshi Saito
Masayasu Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP17720187A priority Critical patent/JPS6421942A/en
Publication of JPS6421942A publication Critical patent/JPS6421942A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a method of forming the electrode wiring having an excellent close-contact property, a low resistance value and few irregularities on the surface by a method wherein an Si film is formed on a substrate having an insulating film, and substantially the whole of the Si film is replaced with at least a kind of metal of W and Mo by conducting a vapor-phase reaction using at least of one WF6 and MoF6. CONSTITUTION:After a silicon film 3 has been formed at least on a part of a substrate 1 having insulating films 2 and 2', substantially the whole of the silicon film 3 is replaced at least with a kind of tungsten and molybdenum by conducting a vapor-phase reaction using at least one of tungsten hexafluoride and molybdenum hexafkuoride. For example, on the field oxide film 2 and the gate oxide film 2' formed on the surface of the silicon crystal substrate 1 by conducting an LOCOS process, a polycrystalline silicon film 3 is deposited using a low pressure CVD method. Subsequently, the polycrystalline silicon film 3 is entirely replaced with a tungsten film 4 by conducting a low pressure CVD method using WF6 and N2. Then, the above-mentioned tungsten film 4 is processed into an electrode wiring shape by conducting dry etching using SF6.
JP17720187A 1987-07-17 1987-07-17 Manufacture of semiconductor device Pending JPS6421942A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17720187A JPS6421942A (en) 1987-07-17 1987-07-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17720187A JPS6421942A (en) 1987-07-17 1987-07-17 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6421942A true JPS6421942A (en) 1989-01-25

Family

ID=16026943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17720187A Pending JPS6421942A (en) 1987-07-17 1987-07-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6421942A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01183116A (en) * 1988-01-18 1989-07-20 Koujiyundo Kagaku Kenkyusho:Kk Method of forming multi-layer electrode
JPH02304928A (en) * 1989-05-19 1990-12-18 Nec Corp Forming method of wiring

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5075769A (en) * 1973-11-07 1975-06-21
JPS6110233A (en) * 1984-06-02 1986-01-17 Fujitsu Ltd Manufacture of semiconductor device
JPS62114276A (en) * 1985-11-14 1987-05-26 Oki Electric Ind Co Ltd Manufacture of semiconductor element
JPS62118525A (en) * 1985-11-19 1987-05-29 Matsushita Electronics Corp Manufacture of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5075769A (en) * 1973-11-07 1975-06-21
JPS6110233A (en) * 1984-06-02 1986-01-17 Fujitsu Ltd Manufacture of semiconductor device
JPS62114276A (en) * 1985-11-14 1987-05-26 Oki Electric Ind Co Ltd Manufacture of semiconductor element
JPS62118525A (en) * 1985-11-19 1987-05-29 Matsushita Electronics Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01183116A (en) * 1988-01-18 1989-07-20 Koujiyundo Kagaku Kenkyusho:Kk Method of forming multi-layer electrode
JPH02304928A (en) * 1989-05-19 1990-12-18 Nec Corp Forming method of wiring

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