JPS5735373A - Manufacture of planar type thyristor - Google Patents
Manufacture of planar type thyristorInfo
- Publication number
- JPS5735373A JPS5735373A JP11194780A JP11194780A JPS5735373A JP S5735373 A JPS5735373 A JP S5735373A JP 11194780 A JP11194780 A JP 11194780A JP 11194780 A JP11194780 A JP 11194780A JP S5735373 A JPS5735373 A JP S5735373A
- Authority
- JP
- Japan
- Prior art keywords
- current
- thyristor
- oxygen
- planar type
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/135—Thyristors having built-in components the built-in components being diodes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11194780A JPS5735373A (en) | 1980-08-11 | 1980-08-11 | Manufacture of planar type thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11194780A JPS5735373A (en) | 1980-08-11 | 1980-08-11 | Manufacture of planar type thyristor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5735373A true JPS5735373A (en) | 1982-02-25 |
JPS6146067B2 JPS6146067B2 (enrdf_load_stackoverflow) | 1986-10-11 |
Family
ID=14574128
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11194780A Granted JPS5735373A (en) | 1980-08-11 | 1980-08-11 | Manufacture of planar type thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5735373A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60169142A (ja) * | 1984-02-10 | 1985-09-02 | Sony Corp | 半導体装置の製造方法 |
JPH03225959A (ja) * | 1990-01-31 | 1991-10-04 | Sharp Corp | 固体撮像素子の製造方法 |
CN103700591A (zh) * | 2013-12-26 | 2014-04-02 | 鞍山市华辰电力器件有限公司 | 采用烧结工艺制造高压大功率晶闸管的方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105575893A (zh) | 2016-01-05 | 2016-05-11 | 京东方科技集团股份有限公司 | 显示基板及其制作方法和显示装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5339744A (en) * | 1976-09-24 | 1978-04-11 | Keihoku Seiki Seisakushiyo Yuu | Long film mount and file sheet |
-
1980
- 1980-08-11 JP JP11194780A patent/JPS5735373A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5339744A (en) * | 1976-09-24 | 1978-04-11 | Keihoku Seiki Seisakushiyo Yuu | Long film mount and file sheet |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60169142A (ja) * | 1984-02-10 | 1985-09-02 | Sony Corp | 半導体装置の製造方法 |
JPH03225959A (ja) * | 1990-01-31 | 1991-10-04 | Sharp Corp | 固体撮像素子の製造方法 |
CN103700591A (zh) * | 2013-12-26 | 2014-04-02 | 鞍山市华辰电力器件有限公司 | 采用烧结工艺制造高压大功率晶闸管的方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6146067B2 (enrdf_load_stackoverflow) | 1986-10-11 |
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