JPS5734363A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5734363A
JPS5734363A JP11001980A JP11001980A JPS5734363A JP S5734363 A JPS5734363 A JP S5734363A JP 11001980 A JP11001980 A JP 11001980A JP 11001980 A JP11001980 A JP 11001980A JP S5734363 A JPS5734363 A JP S5734363A
Authority
JP
Japan
Prior art keywords
regions
region
built
providing
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11001980A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6348192B2 (enrdf_load_stackoverflow
Inventor
Kenichi Muramoto
Takeo Shiomi
Masahiro Ogasawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11001980A priority Critical patent/JPS5734363A/ja
Publication of JPS5734363A publication Critical patent/JPS5734363A/ja
Publication of JPS6348192B2 publication Critical patent/JPS6348192B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP11001980A 1980-08-11 1980-08-11 Semiconductor device Granted JPS5734363A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11001980A JPS5734363A (en) 1980-08-11 1980-08-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11001980A JPS5734363A (en) 1980-08-11 1980-08-11 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5734363A true JPS5734363A (en) 1982-02-24
JPS6348192B2 JPS6348192B2 (enrdf_load_stackoverflow) 1988-09-28

Family

ID=14525055

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11001980A Granted JPS5734363A (en) 1980-08-11 1980-08-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5734363A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60226176A (ja) * 1984-04-25 1985-11-11 Matsushita Electronics Corp 半導体装置
JPS62106663A (ja) * 1985-11-02 1987-05-18 Matsushita Electronics Corp 半導体装置
JPS63190019A (ja) * 1986-09-04 1988-08-05 Toray Ind Inc 優れた捲縮特性と均染性を有するアクリル系複合繊維およびその製造法
JPH01104825A (ja) * 1987-10-13 1989-04-21 Toray Ind Inc 捲縮特性の優れたアクリル系複合繊維の製造法
JPH01104826A (ja) * 1987-10-13 1989-04-21 Toray Ind Inc 新規な捲縮特性を有するアクリル系複合繊維
JPH01104828A (ja) * 1987-10-13 1989-04-21 Toray Ind Inc アクリル系異形断面繊維
JPH01229812A (ja) * 1988-03-04 1989-09-13 Toray Ind Inc 優れた捲縮発現性を有するアクリル系複合繊維の製造法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54159883A (en) * 1978-06-08 1979-12-18 Toshiba Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54159883A (en) * 1978-06-08 1979-12-18 Toshiba Corp Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60226176A (ja) * 1984-04-25 1985-11-11 Matsushita Electronics Corp 半導体装置
JPS62106663A (ja) * 1985-11-02 1987-05-18 Matsushita Electronics Corp 半導体装置
JPS63190019A (ja) * 1986-09-04 1988-08-05 Toray Ind Inc 優れた捲縮特性と均染性を有するアクリル系複合繊維およびその製造法
JPH01104825A (ja) * 1987-10-13 1989-04-21 Toray Ind Inc 捲縮特性の優れたアクリル系複合繊維の製造法
JPH01104826A (ja) * 1987-10-13 1989-04-21 Toray Ind Inc 新規な捲縮特性を有するアクリル系複合繊維
JPH01104828A (ja) * 1987-10-13 1989-04-21 Toray Ind Inc アクリル系異形断面繊維
JPH01229812A (ja) * 1988-03-04 1989-09-13 Toray Ind Inc 優れた捲縮発現性を有するアクリル系複合繊維の製造法

Also Published As

Publication number Publication date
JPS6348192B2 (enrdf_load_stackoverflow) 1988-09-28

Similar Documents

Publication Publication Date Title
ATE47505T1 (de) Monolithisch integrierte halbleiterschaltung.
KR920007199A (ko) 반도체기억장치
JPS56161667A (en) Complementary mos memory circuit device
JPS5734363A (en) Semiconductor device
JPS57208177A (en) Semiconductor negative resistance element
JPS56129367A (en) Semiconductor integrated circuit
JPS5734360A (en) Semiconductor device
JPS5377476A (en) Semiconductor integrated circuit device
JPS5580352A (en) Transistor with high breakdown voltage
JPS52115669A (en) Semiconductor memory device
JPS5588372A (en) Lateral type transistor
SE7707251L (sv) Halvledardiod for integrerad krets
JPS5734362A (en) Semiconductor device
JPS5791566A (en) Solar battery element
JPS5354469A (en) Semiconductor integrated circuit
JPS57153461A (en) Input protective resistor for semiconductor device
JPS56101767A (en) Semiconductor integrated circuit
JPS57140056A (en) Semiconductor storage device
JPS5636151A (en) Semiconductor memory device
JPS51120670A (en) Semiconductor device
JPS5660057A (en) Semiconductor device
JPS6481359A (en) Mos type semiconductor integrated circuit device
JPS5778180A (en) Semiconductor information transmission and memory device
JPS55148457A (en) Semiconductor device with electrode
JPS57208170A (en) Composite transistor