JPS5734335A - Mask for x-ray exposure - Google Patents
Mask for x-ray exposureInfo
- Publication number
- JPS5734335A JPS5734335A JP10924380A JP10924380A JPS5734335A JP S5734335 A JPS5734335 A JP S5734335A JP 10924380 A JP10924380 A JP 10924380A JP 10924380 A JP10924380 A JP 10924380A JP S5734335 A JPS5734335 A JP S5734335A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- gratings
- grooves
- substrate
- diffraction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To reduce the number of arranged gratings formatching on an Si substrate, by providing a mask substrate with circuit patterns of X-ray absorptive material as well as with diffraction gratings for matching of X-ray transmitting material. CONSTITUTION:A mask substrate 31 is provided with circuit patterns 32 using Au and diffraction gratings 33 using Cr. The Si substrate 35 is prearranged periodically with V-grooves 36 playing a part of diffraction grating. Both gratings 33 and 36 are made to match by shifing by 1/2 periode for X-ray exposure. Thereby, the circuit pattern 32 forms a latent image within a resist 34 while the diffraction grating 33 does not form an image. Accordingly, when the resist 34 is fo negative type, the grooves 36 are protected by the resist at the subsequent etching, while when the resist is of positive type, the grooves are uniformly etched thus in both cases the original periode is not damaged to be fully useful for the subequent matching operation so that the diffraction gratings required for mathching are widely reduced with three spots X, Y and theta in the lease case.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10924380A JPS5734335A (en) | 1980-08-11 | 1980-08-11 | Mask for x-ray exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10924380A JPS5734335A (en) | 1980-08-11 | 1980-08-11 | Mask for x-ray exposure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5734335A true JPS5734335A (en) | 1982-02-24 |
Family
ID=14505236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10924380A Pending JPS5734335A (en) | 1980-08-11 | 1980-08-11 | Mask for x-ray exposure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5734335A (en) |
-
1980
- 1980-08-11 JP JP10924380A patent/JPS5734335A/en active Pending
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