JPS5730379A - Thin film solar battery - Google Patents

Thin film solar battery

Info

Publication number
JPS5730379A
JPS5730379A JP10428980A JP10428980A JPS5730379A JP S5730379 A JPS5730379 A JP S5730379A JP 10428980 A JP10428980 A JP 10428980A JP 10428980 A JP10428980 A JP 10428980A JP S5730379 A JPS5730379 A JP S5730379A
Authority
JP
Japan
Prior art keywords
layer
thickness
thin film
porous
film solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10428980A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6142435B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Hiroshi Uda
Toshio Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP10428980A priority Critical patent/JPS5730379A/ja
Publication of JPS5730379A publication Critical patent/JPS5730379A/ja
Publication of JPS6142435B2 publication Critical patent/JPS6142435B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Photovoltaic Devices (AREA)
JP10428980A 1980-07-31 1980-07-31 Thin film solar battery Granted JPS5730379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10428980A JPS5730379A (en) 1980-07-31 1980-07-31 Thin film solar battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10428980A JPS5730379A (en) 1980-07-31 1980-07-31 Thin film solar battery

Publications (2)

Publication Number Publication Date
JPS5730379A true JPS5730379A (en) 1982-02-18
JPS6142435B2 JPS6142435B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-09-20

Family

ID=14376764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10428980A Granted JPS5730379A (en) 1980-07-31 1980-07-31 Thin film solar battery

Country Status (1)

Country Link
JP (1) JPS5730379A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6393170A (ja) * 1986-10-08 1988-04-23 Matsushita Electric Ind Co Ltd 光起電力素子およびその製造方法
JPH0332823A (ja) * 1989-06-29 1991-02-13 Toyoda Gosei Co Ltd ウエザストリップの接続方法
WO2012115265A1 (ja) * 2011-02-25 2012-08-30 京セラ株式会社 光電変換素子および光電変換装置
WO2012115267A1 (ja) * 2011-02-25 2012-08-30 京セラ株式会社 光電変換素子および光電変換装置
JP2013222762A (ja) * 2012-04-13 2013-10-28 Sharp Corp 化合物半導体層およびその製造方法、ならびに化合物薄膜太陽電池およびその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6393170A (ja) * 1986-10-08 1988-04-23 Matsushita Electric Ind Co Ltd 光起電力素子およびその製造方法
JPH0332823A (ja) * 1989-06-29 1991-02-13 Toyoda Gosei Co Ltd ウエザストリップの接続方法
WO2012115265A1 (ja) * 2011-02-25 2012-08-30 京セラ株式会社 光電変換素子および光電変換装置
WO2012115267A1 (ja) * 2011-02-25 2012-08-30 京セラ株式会社 光電変換素子および光電変換装置
JP2013222762A (ja) * 2012-04-13 2013-10-28 Sharp Corp 化合物半導体層およびその製造方法、ならびに化合物薄膜太陽電池およびその製造方法

Also Published As

Publication number Publication date
JPS6142435B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-09-20

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