JPS5730364A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5730364A JPS5730364A JP10447780A JP10447780A JPS5730364A JP S5730364 A JPS5730364 A JP S5730364A JP 10447780 A JP10447780 A JP 10447780A JP 10447780 A JP10447780 A JP 10447780A JP S5730364 A JPS5730364 A JP S5730364A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type region
- crystalline
- silicon
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- -1 silicon ions Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10447780A JPS5730364A (en) | 1980-07-30 | 1980-07-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10447780A JPS5730364A (en) | 1980-07-30 | 1980-07-30 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5730364A true JPS5730364A (en) | 1982-02-18 |
| JPS6211791B2 JPS6211791B2 (enrdf_load_stackoverflow) | 1987-03-14 |
Family
ID=14381641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10447780A Granted JPS5730364A (en) | 1980-07-30 | 1980-07-30 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5730364A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58135424U (ja) * | 1982-03-05 | 1983-09-12 | 東洋物産株式会社 | 耐寒耐水服 |
-
1980
- 1980-07-30 JP JP10447780A patent/JPS5730364A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58135424U (ja) * | 1982-03-05 | 1983-09-12 | 東洋物産株式会社 | 耐寒耐水服 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6211791B2 (enrdf_load_stackoverflow) | 1987-03-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6076118A (ja) | 半導体デバイスの製作法 | |
| EP0401473A3 (en) | Method of low defect junction and isolation formation in semiconductor material | |
| EP0147626A3 (en) | Semiconductor device comprising bipolar and mos transistors, and method of producing the same | |
| JPS5730364A (en) | Manufacture of semiconductor device | |
| JPS5645047A (en) | Manufacture of semiconductor monocrystal film | |
| JPS5671928A (en) | Treatment for silicon substrate | |
| JPS5459090A (en) | Semiconductor device and its manufacture | |
| JPS575328A (en) | Growing method for semiconductor crystal | |
| JPS5768015A (en) | Manufacture of semiconductor device | |
| JPS5567131A (en) | Method for manufacturing semiconductor device | |
| JPS57115822A (en) | Manufacture of semiconductor device | |
| JPS56167335A (en) | Manufacture of semiconductor device | |
| EP0284107A3 (en) | Method of strengthening silicon wafer | |
| JPS5565427A (en) | Semiconductor device | |
| JPS5671929A (en) | Treatment for silicon substrate | |
| JPS5491079A (en) | Manufacture of semiconductor device | |
| JPS56105625A (en) | Manufacture of compound semiconductor thin film single crystal of high ratio resistance and low transition density | |
| JPS56101743A (en) | Manufacture of silicon single-crystalline film | |
| JPS56146231A (en) | Manufacture of semiconductor device | |
| JPH0533527B2 (enrdf_load_stackoverflow) | ||
| JPS57109353A (en) | Semiconductor device | |
| JPS56142628A (en) | Manufacture of semiconductor device | |
| JPS56162828A (en) | Manufacture of semiconductor device | |
| JPS54154269A (en) | Liquid-phase growth method | |
| JPS5768014A (en) | Manufacture of semiconductor single crystal film |