JPS5730337A - Formation of surface protecting film for semiconductor - Google Patents
Formation of surface protecting film for semiconductorInfo
- Publication number
- JPS5730337A JPS5730337A JP10452680A JP10452680A JPS5730337A JP S5730337 A JPS5730337 A JP S5730337A JP 10452680 A JP10452680 A JP 10452680A JP 10452680 A JP10452680 A JP 10452680A JP S5730337 A JPS5730337 A JP S5730337A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- film
- protecting film
- insulating film
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P14/60—
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10452680A JPS5730337A (en) | 1980-07-30 | 1980-07-30 | Formation of surface protecting film for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10452680A JPS5730337A (en) | 1980-07-30 | 1980-07-30 | Formation of surface protecting film for semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5730337A true JPS5730337A (en) | 1982-02-18 |
| JPS6313339B2 JPS6313339B2 (member.php) | 1988-03-25 |
Family
ID=14382928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10452680A Granted JPS5730337A (en) | 1980-07-30 | 1980-07-30 | Formation of surface protecting film for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5730337A (member.php) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6461026A (en) * | 1987-09-01 | 1989-03-08 | Nec Corp | Manufacture of semiconductor device |
| JPH0276231A (ja) * | 1988-09-13 | 1990-03-15 | Toshiba Corp | 化合物半導体装置とその製造方法 |
| JP2007134712A (ja) * | 2005-11-07 | 2007-05-31 | Samsung Electronics Co Ltd | 半導体装置及びその製造方法 |
| JP4818352B2 (ja) * | 2005-04-01 | 2011-11-16 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 堆積ストレッサ材料の応力レベルを上昇させる方法、及び半導体構造体を形成する方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS556291A (en) * | 1978-06-26 | 1980-01-17 | Contraves Ag | Digital interporation system for three pahse analog signal period |
-
1980
- 1980-07-30 JP JP10452680A patent/JPS5730337A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS556291A (en) * | 1978-06-26 | 1980-01-17 | Contraves Ag | Digital interporation system for three pahse analog signal period |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6461026A (en) * | 1987-09-01 | 1989-03-08 | Nec Corp | Manufacture of semiconductor device |
| JPH0276231A (ja) * | 1988-09-13 | 1990-03-15 | Toshiba Corp | 化合物半導体装置とその製造方法 |
| JP4818352B2 (ja) * | 2005-04-01 | 2011-11-16 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 堆積ストレッサ材料の応力レベルを上昇させる方法、及び半導体構造体を形成する方法 |
| JP2007134712A (ja) * | 2005-11-07 | 2007-05-31 | Samsung Electronics Co Ltd | 半導体装置及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6313339B2 (member.php) | 1988-03-25 |
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