JPS5730337A - Formation of surface protecting film for semiconductor - Google Patents
Formation of surface protecting film for semiconductorInfo
- Publication number
- JPS5730337A JPS5730337A JP10452680A JP10452680A JPS5730337A JP S5730337 A JPS5730337 A JP S5730337A JP 10452680 A JP10452680 A JP 10452680A JP 10452680 A JP10452680 A JP 10452680A JP S5730337 A JPS5730337 A JP S5730337A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- film
- protecting film
- insulating film
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000000034 method Methods 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 238000010894 electron beam technology Methods 0.000 abstract 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10452680A JPS5730337A (en) | 1980-07-30 | 1980-07-30 | Formation of surface protecting film for semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10452680A JPS5730337A (en) | 1980-07-30 | 1980-07-30 | Formation of surface protecting film for semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5730337A true JPS5730337A (en) | 1982-02-18 |
JPS6313339B2 JPS6313339B2 (enrdf_load_stackoverflow) | 1988-03-25 |
Family
ID=14382928
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10452680A Granted JPS5730337A (en) | 1980-07-30 | 1980-07-30 | Formation of surface protecting film for semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5730337A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6461026A (en) * | 1987-09-01 | 1989-03-08 | Nec Corp | Manufacture of semiconductor device |
JPH0276231A (ja) * | 1988-09-13 | 1990-03-15 | Toshiba Corp | 化合物半導体装置とその製造方法 |
JP2007134712A (ja) * | 2005-11-07 | 2007-05-31 | Samsung Electronics Co Ltd | 半導体装置及びその製造方法 |
JP4818352B2 (ja) * | 2005-04-01 | 2011-11-16 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 堆積ストレッサ材料の応力レベルを上昇させる方法、及び半導体構造体を形成する方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS556291A (en) * | 1978-06-26 | 1980-01-17 | Contraves Ag | Digital interporation system for three pahse analog signal period |
-
1980
- 1980-07-30 JP JP10452680A patent/JPS5730337A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS556291A (en) * | 1978-06-26 | 1980-01-17 | Contraves Ag | Digital interporation system for three pahse analog signal period |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6461026A (en) * | 1987-09-01 | 1989-03-08 | Nec Corp | Manufacture of semiconductor device |
JPH0276231A (ja) * | 1988-09-13 | 1990-03-15 | Toshiba Corp | 化合物半導体装置とその製造方法 |
JP4818352B2 (ja) * | 2005-04-01 | 2011-11-16 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 堆積ストレッサ材料の応力レベルを上昇させる方法、及び半導体構造体を形成する方法 |
JP2007134712A (ja) * | 2005-11-07 | 2007-05-31 | Samsung Electronics Co Ltd | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6313339B2 (enrdf_load_stackoverflow) | 1988-03-25 |
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