JPS6313339B2 - - Google Patents

Info

Publication number
JPS6313339B2
JPS6313339B2 JP55104526A JP10452680A JPS6313339B2 JP S6313339 B2 JPS6313339 B2 JP S6313339B2 JP 55104526 A JP55104526 A JP 55104526A JP 10452680 A JP10452680 A JP 10452680A JP S6313339 B2 JPS6313339 B2 JP S6313339B2
Authority
JP
Japan
Prior art keywords
film
semiconductor
silicon nitride
protective film
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55104526A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5730337A (en
Inventor
Toshitaka Torikai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP10452680A priority Critical patent/JPS5730337A/ja
Publication of JPS5730337A publication Critical patent/JPS5730337A/ja
Publication of JPS6313339B2 publication Critical patent/JPS6313339B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP10452680A 1980-07-30 1980-07-30 Formation of surface protecting film for semiconductor Granted JPS5730337A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10452680A JPS5730337A (en) 1980-07-30 1980-07-30 Formation of surface protecting film for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10452680A JPS5730337A (en) 1980-07-30 1980-07-30 Formation of surface protecting film for semiconductor

Publications (2)

Publication Number Publication Date
JPS5730337A JPS5730337A (en) 1982-02-18
JPS6313339B2 true JPS6313339B2 (enrdf_load_stackoverflow) 1988-03-25

Family

ID=14382928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10452680A Granted JPS5730337A (en) 1980-07-30 1980-07-30 Formation of surface protecting film for semiconductor

Country Status (1)

Country Link
JP (1) JPS5730337A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6461026A (en) * 1987-09-01 1989-03-08 Nec Corp Manufacture of semiconductor device
JPH088265B2 (ja) * 1988-09-13 1996-01-29 株式会社東芝 化合物半導体装置とその製造方法
US7585704B2 (en) * 2005-04-01 2009-09-08 International Business Machines Corporation Method of producing highly strained PECVD silicon nitride thin films at low temperature
US7867867B2 (en) * 2005-11-07 2011-01-11 Samsung Electronics Co., Ltd. Methods of manufacturing semiconductor devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE441T1 (de) * 1978-06-26 1981-12-15 Contraves Ag Verfahren zur digitalen interpolation einer periode eines dreiphasigen analogsignals.

Also Published As

Publication number Publication date
JPS5730337A (en) 1982-02-18

Similar Documents

Publication Publication Date Title
US5426076A (en) Dielectric deposition and cleaning process for improved gap filling and device planarization
US5456952A (en) Process of curing hydrogen silsesquioxane coating to form silicon oxide layer
WO2000077275A1 (en) Method of processing films prior to chemical vapor deposition using electron beam processing
JPS6359251B2 (enrdf_load_stackoverflow)
JPH0691014B2 (ja) 半導体装置の製造装置
JP3176857B2 (ja) 半導体装置の製造方法
JPH0638513B2 (ja) 反射防止被膜を有する太陽電池の製造方法
EP0469824A1 (en) Method of depositing fluorinated silicon nitride
JPS6313339B2 (enrdf_load_stackoverflow)
JP3149739B2 (ja) 多層配線形成法
JP3123449B2 (ja) 多層配線形成法
JP3263132B2 (ja) 半導体装置の製造方法
JP2703228B2 (ja) 窒化シリコン膜の形成方法
CA1277438C (en) Dual layer encapsulation coating for iii - v semiconductor compounds
JP2865071B2 (ja) 反射防止膜の製造方法
JPH0337728B2 (enrdf_load_stackoverflow)
KR100329787B1 (ko) 반도체 소자의 감광막 제거방법
JP3777677B2 (ja) 絶縁性のフッ素化表面パターンを有する炭素膜とその製造方法
JPS60261143A (ja) 半導体装置の製造方法
JPS6234139B2 (enrdf_load_stackoverflow)
JP3088447B2 (ja) プラズマ処理装置およびプラズマ処理方法
JP2558765B2 (ja) 半導体装置の製造方法
JP2611496B2 (ja) 表面処理方法
JP3008996B2 (ja) 絶縁膜の形成方法
JPH04110471A (ja) 薄膜形成方法