JPS5728000A - Liquid phase epitaxial growing method - Google Patents

Liquid phase epitaxial growing method

Info

Publication number
JPS5728000A
JPS5728000A JP10020180A JP10020180A JPS5728000A JP S5728000 A JPS5728000 A JP S5728000A JP 10020180 A JP10020180 A JP 10020180A JP 10020180 A JP10020180 A JP 10020180A JP S5728000 A JPS5728000 A JP S5728000A
Authority
JP
Japan
Prior art keywords
growing
layer
ingaasp
thickness
rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10020180A
Other languages
English (en)
Japanese (ja)
Other versions
JPH027920B2 (enrdf_load_stackoverflow
Inventor
Yoshinari Matsumoto
Kenshin Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10020180A priority Critical patent/JPS5728000A/ja
Publication of JPS5728000A publication Critical patent/JPS5728000A/ja
Publication of JPH027920B2 publication Critical patent/JPH027920B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP10020180A 1980-07-22 1980-07-22 Liquid phase epitaxial growing method Granted JPS5728000A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10020180A JPS5728000A (en) 1980-07-22 1980-07-22 Liquid phase epitaxial growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10020180A JPS5728000A (en) 1980-07-22 1980-07-22 Liquid phase epitaxial growing method

Publications (2)

Publication Number Publication Date
JPS5728000A true JPS5728000A (en) 1982-02-15
JPH027920B2 JPH027920B2 (enrdf_load_stackoverflow) 1990-02-21

Family

ID=14267681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10020180A Granted JPS5728000A (en) 1980-07-22 1980-07-22 Liquid phase epitaxial growing method

Country Status (1)

Country Link
JP (1) JPS5728000A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4888300A (en) * 1985-11-07 1989-12-19 Fairchild Camera And Instrument Corporation Submerged wall isolation of silicon islands

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4888300A (en) * 1985-11-07 1989-12-19 Fairchild Camera And Instrument Corporation Submerged wall isolation of silicon islands

Also Published As

Publication number Publication date
JPH027920B2 (enrdf_load_stackoverflow) 1990-02-21

Similar Documents

Publication Publication Date Title
JPS5696834A (en) Compound semiconductor epitaxial wafer and manufacture thereof
JPS577131A (en) Manufacture of p-n junction
JPS5728000A (en) Liquid phase epitaxial growing method
DE2030367A1 (de) Verfahren zur Herstellung \on Halb leiterelementen mit p n Verbindungen
JPS57128092A (en) Imbedded type semiconductor laser device
JPS5434756A (en) Vapor-phase growth method for semiconductor
JPS5737827A (en) Manufacture of semiconductor device
GB1526898A (en) Production of epitaxial layers on monocrystalline substrates
JPS6437832A (en) Method of growing compound semiconductor crystal
JPS56112761A (en) Manufacture of 3-5 group element semiconductor device
JPS5587423A (en) Semiconductor device
JPS52120764A (en) Manufacture of semiconductor device on insulator substrate
JPS54114089A (en) Hall element using gallium arsenide crystal
JPS6449215A (en) Epitaxial growth
JPS57198668A (en) Light receiving element
JPS5574195A (en) Manufacturing semiconductor laser
JP2864808B2 (ja) Ｉｉｉ−ｖ族化合物半導体単結晶
JPS5520258A (en) Liquid phase epitaxial growing method and device
JPS5575272A (en) Solar battery
JPS57103314A (en) Method for liquid phase epitaxial growth
JPS5694619A (en) Growing method for crystal of semiconductor
JPS54109080A (en) Crystal-growing method by limited-edge-crystal growing method
JPS52155189A (en) Multiple layer crystal growth
JPS5771899A (en) Epitaxial growth of liquid phase of semiconductor of 1-5 group compound
JPS5788095A (en) Vapor phase growing method