JPS572546A - Forming method for thick film infinitesimal metallic pattern - Google Patents

Forming method for thick film infinitesimal metallic pattern

Info

Publication number
JPS572546A
JPS572546A JP7647280A JP7647280A JPS572546A JP S572546 A JPS572546 A JP S572546A JP 7647280 A JP7647280 A JP 7647280A JP 7647280 A JP7647280 A JP 7647280A JP S572546 A JPS572546 A JP S572546A
Authority
JP
Japan
Prior art keywords
pattern
infinitesimal
metallic
thick
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7647280A
Other languages
Japanese (ja)
Other versions
JPS6137779B2 (en
Inventor
Katsumi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7647280A priority Critical patent/JPS572546A/en
Publication of JPS572546A publication Critical patent/JPS572546A/en
Publication of JPS6137779B2 publication Critical patent/JPS6137779B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Manufacturing Of Printed Circuit Boards (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To enable the formation of a thick film infinitesimal metallic pattern with good reproducibility by forming an infinitesimal pattern of Si3N4 on a substrate on which a conductive metallic layer is covered, exposing the surface of the metallic layer and covering the surface with a metallic layer by a plating method. CONSTITUTION:A conductive metallic thin film 12 of Au or the like is covered on the surface of a substrate 11, and a silicon nitrided film layer 13 is accumulated thereon. Then, a resist is covered, an infinitesimal pattern 14 is formed by an electron beam exposure or the like, the film 13 is etched by a dry etching method, and a thick pattern 13' is obtained. A thick metallic layer is then so formed by a plating method as to bury the hole of the pattern 13', the pattern 13' is then removed, and a desired thick metallic pattern 15 is obtained.
JP7647280A 1980-06-06 1980-06-06 Forming method for thick film infinitesimal metallic pattern Granted JPS572546A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7647280A JPS572546A (en) 1980-06-06 1980-06-06 Forming method for thick film infinitesimal metallic pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7647280A JPS572546A (en) 1980-06-06 1980-06-06 Forming method for thick film infinitesimal metallic pattern

Publications (2)

Publication Number Publication Date
JPS572546A true JPS572546A (en) 1982-01-07
JPS6137779B2 JPS6137779B2 (en) 1986-08-26

Family

ID=13606111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7647280A Granted JPS572546A (en) 1980-06-06 1980-06-06 Forming method for thick film infinitesimal metallic pattern

Country Status (1)

Country Link
JP (1) JPS572546A (en)

Also Published As

Publication number Publication date
JPS6137779B2 (en) 1986-08-26

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