JPS5556634A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5556634A
JPS5556634A JP13021278A JP13021278A JPS5556634A JP S5556634 A JPS5556634 A JP S5556634A JP 13021278 A JP13021278 A JP 13021278A JP 13021278 A JP13021278 A JP 13021278A JP S5556634 A JPS5556634 A JP S5556634A
Authority
JP
Japan
Prior art keywords
film
electrode
reflection
hole
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13021278A
Other languages
Japanese (ja)
Inventor
Isamu Takashima
Ichiemon Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13021278A priority Critical patent/JPS5556634A/en
Publication of JPS5556634A publication Critical patent/JPS5556634A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To avoid the generation of the deformation of a resist pattern formed, by eliminating the partial difference of photo-reflection factor by beforehand mounting a metallic film onto a surface of a semiconductor substrate before applying photo-resist on the surface.
CONSTITUTION: An upper portion of a semiconductor substrate 1 is coated with SiO2 film 2, an Al metal electrode 3 with a fixed shape is installed onto the film 2 and a SiO2 film 4 is gaseous phase-grown on the whole surface containing the electrode. The whole surface is covered with a photo-resist film 5, and selectively exposed and a hole with a fixed size is bored on the electrode 3, but the thickness of the film 5 decreases because reflection is little in a region B that there is no electrode 3 if the quantity of exposure is a small quantity at that time, and an unnecessary hole B' is produced if etching the film. Meanwhile, a hole A' smaller than a hole A, which must be bored, is formed owing to reflection in an electrode 3 portion if the quantity of exposure is too much. Thus, a bonding region C with a fixed size is obtained on the electrode 3 when reflection is uniformalized by beforehand coating a lower portion of the film 5 with a film 6 in Al or Cr.
COPYRIGHT: (C)1980,JPO&Japio
JP13021278A 1978-10-23 1978-10-23 Preparation of semiconductor device Pending JPS5556634A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13021278A JPS5556634A (en) 1978-10-23 1978-10-23 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13021278A JPS5556634A (en) 1978-10-23 1978-10-23 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5556634A true JPS5556634A (en) 1980-04-25

Family

ID=15028763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13021278A Pending JPS5556634A (en) 1978-10-23 1978-10-23 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5556634A (en)

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