JPS5724577A - Manufacture of solid state image pick up device - Google Patents

Manufacture of solid state image pick up device

Info

Publication number
JPS5724577A
JPS5724577A JP10038380A JP10038380A JPS5724577A JP S5724577 A JPS5724577 A JP S5724577A JP 10038380 A JP10038380 A JP 10038380A JP 10038380 A JP10038380 A JP 10038380A JP S5724577 A JPS5724577 A JP S5724577A
Authority
JP
Japan
Prior art keywords
region
insulator
electrode
manufacture
solid state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10038380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6140144B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP10038380A priority Critical patent/JPS5724577A/ja
Publication of JPS5724577A publication Critical patent/JPS5724577A/ja
Publication of JPS6140144B2 publication Critical patent/JPS6140144B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/196—Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP10038380A 1980-07-21 1980-07-21 Manufacture of solid state image pick up device Granted JPS5724577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10038380A JPS5724577A (en) 1980-07-21 1980-07-21 Manufacture of solid state image pick up device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10038380A JPS5724577A (en) 1980-07-21 1980-07-21 Manufacture of solid state image pick up device

Publications (2)

Publication Number Publication Date
JPS5724577A true JPS5724577A (en) 1982-02-09
JPS6140144B2 JPS6140144B2 (enrdf_load_stackoverflow) 1986-09-08

Family

ID=14272483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10038380A Granted JPS5724577A (en) 1980-07-21 1980-07-21 Manufacture of solid state image pick up device

Country Status (1)

Country Link
JP (1) JPS5724577A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008511132A (ja) * 2004-08-20 2008-04-10 アウロラ、アルット 改変内部ゲート構造を用いた半導体放射線検出器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008511132A (ja) * 2004-08-20 2008-04-10 アウロラ、アルット 改変内部ゲート構造を用いた半導体放射線検出器

Also Published As

Publication number Publication date
JPS6140144B2 (enrdf_load_stackoverflow) 1986-09-08

Similar Documents

Publication Publication Date Title
EP0288052A3 (en) Semiconductor device comprising a substrate, and production method thereof
JPS54589A (en) Burying method of insulator
JPS54108582A (en) Manufacture of silicon type field effect transistor
JPS5772321A (en) Manufacture of seiconductor device
JPS5724577A (en) Manufacture of solid state image pick up device
JPS54154272A (en) Contact forming method for semiconductor device
JPS6457717A (en) Manufacture of semiconductor device
JPS57191539A (en) Semiconductor ion sensor
JPS5513904A (en) Semiconductor device and its manufacturing method
JPS6430228A (en) Manufacture of semiconductor device
JPS56133844A (en) Semiconductor device
JPS5658258A (en) Semiconductor integrated circuit
JPS52129279A (en) Production of semiconductor device
JPS5712579A (en) Buried type semiconductor laser
JPS53116787A (en) Production of semiconductor device
JPS5227362A (en) Formation method of passivation film
JPS57198647A (en) Semiconductor device and manufacture therefor
JPS57121231A (en) Manufacture of semiconductor device
JPS5538061A (en) Bridging wiring method
JPS54136173A (en) Semiconductor device
JPS5748266A (en) Transistor
JPS5511370A (en) Semiconductor laser system
JPS56167346A (en) Manufacture of semiconductor device
JPS6439745A (en) Manufacture of semiconductor substrate for integrated circuit device
JPS57206060A (en) Manufacturing method for semiconductor device