JPS5724577A - Manufacture of solid state image pick up device - Google Patents

Manufacture of solid state image pick up device

Info

Publication number
JPS5724577A
JPS5724577A JP10038380A JP10038380A JPS5724577A JP S5724577 A JPS5724577 A JP S5724577A JP 10038380 A JP10038380 A JP 10038380A JP 10038380 A JP10038380 A JP 10038380A JP S5724577 A JPS5724577 A JP S5724577A
Authority
JP
Japan
Prior art keywords
region
insulator
electrode
manufacture
solid state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10038380A
Other languages
Japanese (ja)
Other versions
JPS6140144B2 (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP10038380A priority Critical patent/JPS5724577A/en
Publication of JPS5724577A publication Critical patent/JPS5724577A/en
Publication of JPS6140144B2 publication Critical patent/JPS6140144B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To enable the element separation and the element structure formation to be readily performed, by combining a directional etching and the selective formation of an insulator film, and by self alignment. CONSTITUTION:After a P<+> region 2, an n<+> region 3, and an n<-> region 4 are formed on an i (n<-> of p<->) Si substrate 1, the n<-> region 4 is etched directionally and removed so as to make the main surface and the wall perpendicular, to obtain a P<+> region 6. Next, after an etching is done to the depth of the region 2, an n<+> region 14 is formed, and an n<+> region 5 is formed. After an insulator 8 is buried in the cut part, a contact metal 9 in the P<+> region 6 is formed. On the region 6, an insulator 10, an electrode 11, an insulator 12 and an electrode 13 are laminated respectively. Moreover, on the rear side, an n<+> region 15 and an electrode 16 are provided.
JP10038380A 1980-07-21 1980-07-21 Manufacture of solid state image pick up device Granted JPS5724577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10038380A JPS5724577A (en) 1980-07-21 1980-07-21 Manufacture of solid state image pick up device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10038380A JPS5724577A (en) 1980-07-21 1980-07-21 Manufacture of solid state image pick up device

Publications (2)

Publication Number Publication Date
JPS5724577A true JPS5724577A (en) 1982-02-09
JPS6140144B2 JPS6140144B2 (en) 1986-09-08

Family

ID=14272483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10038380A Granted JPS5724577A (en) 1980-07-21 1980-07-21 Manufacture of solid state image pick up device

Country Status (1)

Country Link
JP (1) JPS5724577A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008511132A (en) * 2004-08-20 2008-04-10 アウロラ、アルット Semiconductor radiation detector using a modified internal gate structure.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008511132A (en) * 2004-08-20 2008-04-10 アウロラ、アルット Semiconductor radiation detector using a modified internal gate structure.

Also Published As

Publication number Publication date
JPS6140144B2 (en) 1986-09-08

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