JPS5723279A - Manufacture of pv type infrared ray detector - Google Patents

Manufacture of pv type infrared ray detector

Info

Publication number
JPS5723279A
JPS5723279A JP9805280A JP9805280A JPS5723279A JP S5723279 A JPS5723279 A JP S5723279A JP 9805280 A JP9805280 A JP 9805280A JP 9805280 A JP9805280 A JP 9805280A JP S5723279 A JPS5723279 A JP S5723279A
Authority
JP
Japan
Prior art keywords
substrate
window
region
whole surface
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9805280A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6259470B2 (enrdf_load_stackoverflow
Inventor
Shigeki Hamashima
Hiroshi Takigawa
Mitsuo Yoshikawa
Michiharu Ito
Tomoshi Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9805280A priority Critical patent/JPS5723279A/ja
Publication of JPS5723279A publication Critical patent/JPS5723279A/ja
Publication of JPS6259470B2 publication Critical patent/JPS6259470B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes

Landscapes

  • Light Receiving Elements (AREA)
JP9805280A 1980-07-16 1980-07-16 Manufacture of pv type infrared ray detector Granted JPS5723279A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9805280A JPS5723279A (en) 1980-07-16 1980-07-16 Manufacture of pv type infrared ray detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9805280A JPS5723279A (en) 1980-07-16 1980-07-16 Manufacture of pv type infrared ray detector

Publications (2)

Publication Number Publication Date
JPS5723279A true JPS5723279A (en) 1982-02-06
JPS6259470B2 JPS6259470B2 (enrdf_load_stackoverflow) 1987-12-11

Family

ID=14209456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9805280A Granted JPS5723279A (en) 1980-07-16 1980-07-16 Manufacture of pv type infrared ray detector

Country Status (1)

Country Link
JP (1) JPS5723279A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5420445A (en) * 1993-02-22 1995-05-30 Texas Instruments Incorporated Aluminum-masked and radiantly-annealed group II-IV diffused region
US5681119A (en) * 1995-02-21 1997-10-28 Marui Co., Ltd. Ball bearing of a head component for a bicycle with an improved mounting structure

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0427865U (enrdf_load_stackoverflow) * 1990-07-02 1992-03-05

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5420445A (en) * 1993-02-22 1995-05-30 Texas Instruments Incorporated Aluminum-masked and radiantly-annealed group II-IV diffused region
US5681119A (en) * 1995-02-21 1997-10-28 Marui Co., Ltd. Ball bearing of a head component for a bicycle with an improved mounting structure

Also Published As

Publication number Publication date
JPS6259470B2 (enrdf_load_stackoverflow) 1987-12-11

Similar Documents

Publication Publication Date Title
JPS5513938A (en) Photoelectronic conversion semiconductor device and its manufacturing method
FR2432765B1 (enrdf_load_stackoverflow)
GB1529139A (en) Photovoltaic cell and a method of manufacturing such a cell
EP0241226A3 (en) Semiconductor device and method of making it
JPS5723279A (en) Manufacture of pv type infrared ray detector
US4343962A (en) Oxide charge induced high low junction emitter solar cell
DE2960880D1 (en) Process for producing epitaxial layers on selectively doped silicon substrates with high impurity concentration
JPS57159070A (en) Manufacture of photo electromotive force element
JPS54146984A (en) Luminous element
US4483063A (en) Oxide charge induced high low junction emitter solar cell
ES8404570A1 (es) Metodo de fabricacion de una culula solar de sulfuro de cadmio.
JPS5312289A (en) Production of semiconductor device
JPS55102280A (en) Infrared charge transfer device
JPS54149465A (en) Production of semiconductor device
JPS5417682A (en) Semiconductor and its manufacture
JPS57107082A (en) Detector for infrared ray
JPS52124888A (en) Production of solar battery
JPS5724560A (en) Thyristor
JPS57187976A (en) Semiconductor photoelectric converter
JPS5670675A (en) Manufacture of photoelectric converter
JPS5538082A (en) Formation for buried layer of semiconductor device
JPS6468976A (en) Manufacture of semiconductor radiation detector
JPS52137987A (en) Production of semiconductor device
JPS55130141A (en) Fabricating method of semiconductor device
JPS5389375A (en) Production of semiconductor device