JPS5723269A - Input protecting circuit - Google Patents

Input protecting circuit

Info

Publication number
JPS5723269A
JPS5723269A JP9723280A JP9723280A JPS5723269A JP S5723269 A JPS5723269 A JP S5723269A JP 9723280 A JP9723280 A JP 9723280A JP 9723280 A JP9723280 A JP 9723280A JP S5723269 A JPS5723269 A JP S5723269A
Authority
JP
Japan
Prior art keywords
region
resistor
protecting circuit
pad
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9723280A
Other languages
Japanese (ja)
Inventor
Hiroshi Kawasaki
Masataka Hirasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9723280A priority Critical patent/JPS5723269A/en
Publication of JPS5723269A publication Critical patent/JPS5723269A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps

Abstract

PURPOSE:To strengthen the electrostatic breakdown strength of an input protecting circuit, by connecting the input electrode of a CMOSIC to the region of conductivity type reverse to that of a substrate, making the low-concentration region including said region a resistor, and connecting said resistor to a P-N junction in series. CONSTITUTION:Low-concentration regions 25, 30 are provided on an N type substrate 27 during, for example, a forming process of a P well. A P<+> region 26 is provided in the region 35 and connected to an input pad 21, and a P<+> layer 28 provided on the periphery of the region 25 is connected to an N<+> region 29 formed in the region 30 through a wiring 352. Thus the region 30 between the P<+> regions 26, 28 becomes a resistor 24, which is inserted in series between the pad 21 and a P type protective diode 22 formed from the substrate 27 and regions 25, 28. Similarly, the resistor 24 is inserted between the pad 21 and an N-type protective diode 23 consisting of the region 29 and the 30. Because any rapid removal of electric charge is thereby prohibited, the junction breakdown voltage of the protecting circuit is strengthened.
JP9723280A 1980-07-16 1980-07-16 Input protecting circuit Pending JPS5723269A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9723280A JPS5723269A (en) 1980-07-16 1980-07-16 Input protecting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9723280A JPS5723269A (en) 1980-07-16 1980-07-16 Input protecting circuit

Publications (1)

Publication Number Publication Date
JPS5723269A true JPS5723269A (en) 1982-02-06

Family

ID=14186870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9723280A Pending JPS5723269A (en) 1980-07-16 1980-07-16 Input protecting circuit

Country Status (1)

Country Link
JP (1) JPS5723269A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021561A (en) * 1983-07-15 1985-02-02 Nec Corp Semiconductor protection device
JPH0590522A (en) * 1992-03-16 1993-04-09 Seiko Epson Corp Semiconductor device
CN107086216A (en) * 2016-02-12 2017-08-22 爱思开海力士有限公司 Grid for electrostatic discharge (ESD) protection couple nmos device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021561A (en) * 1983-07-15 1985-02-02 Nec Corp Semiconductor protection device
JPH0244156B2 (en) * 1983-07-15 1990-10-02 Nippon Electric Co
JPH0590522A (en) * 1992-03-16 1993-04-09 Seiko Epson Corp Semiconductor device
CN107086216A (en) * 2016-02-12 2017-08-22 爱思开海力士有限公司 Grid for electrostatic discharge (ESD) protection couple nmos device
CN107086216B (en) * 2016-02-12 2020-07-10 爱思开海力士有限公司 Gate coupled NMOS device for electrostatic discharge protection

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