JPS5721875A - Photosensor - Google Patents

Photosensor

Info

Publication number
JPS5721875A
JPS5721875A JP9595280A JP9595280A JPS5721875A JP S5721875 A JPS5721875 A JP S5721875A JP 9595280 A JP9595280 A JP 9595280A JP 9595280 A JP9595280 A JP 9595280A JP S5721875 A JPS5721875 A JP S5721875A
Authority
JP
Japan
Prior art keywords
layer
photosensor
group
aluminum
photoconductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9595280A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6322074B2 (enrdf_load_stackoverflow
Inventor
Toshiyuki Komatsu
Masaki Fukaya
Yoshiaki Shirato
Seishiro Yoshioka
Shunichi Uzawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP9595280A priority Critical patent/JPS5721875A/ja
Publication of JPS5721875A publication Critical patent/JPS5721875A/ja
Publication of JPS6322074B2 publication Critical patent/JPS6322074B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
JP9595280A 1980-07-14 1980-07-14 Photosensor Granted JPS5721875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9595280A JPS5721875A (en) 1980-07-14 1980-07-14 Photosensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9595280A JPS5721875A (en) 1980-07-14 1980-07-14 Photosensor

Publications (2)

Publication Number Publication Date
JPS5721875A true JPS5721875A (en) 1982-02-04
JPS6322074B2 JPS6322074B2 (enrdf_load_stackoverflow) 1988-05-10

Family

ID=14151585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9595280A Granted JPS5721875A (en) 1980-07-14 1980-07-14 Photosensor

Country Status (1)

Country Link
JP (1) JPS5721875A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132654A (ja) * 1983-01-20 1984-07-30 Fuji Xerox Co Ltd 長尺薄膜原稿読取素子の製造方法
JPS61181158A (ja) * 1985-02-06 1986-08-13 Nec Corp 密着型イメ−ジセンサ
JP2011228733A (ja) * 2011-06-29 2011-11-10 Mitsubishi Electric Corp フォトセンサー及びその製造方法
KR20180084984A (ko) 2015-12-21 2018-07-25 신와 콘트롤즈 가부시키가이샤 칠러 장치

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03116671A (ja) * 1989-09-29 1991-05-17 Riyousei Denso Kk 受接続端子
JPH0355670U (enrdf_load_stackoverflow) * 1989-10-03 1991-05-29

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54139341A (en) * 1978-04-20 1979-10-29 Canon Inc Information processing unit
JPS54141594A (en) * 1978-04-24 1979-11-02 Rca Corp Armophous silicon solar battery
JPS5539404A (en) * 1978-08-18 1980-03-19 Hitachi Ltd Solid state pickup device
JPS5548979A (en) * 1978-10-03 1980-04-08 Mitsubishi Electric Corp Manufacturing method of solar cell
JPS56125881A (en) * 1980-03-06 1981-10-02 Fuji Photo Film Co Ltd Optical semiconductor element

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54139341A (en) * 1978-04-20 1979-10-29 Canon Inc Information processing unit
JPS54141594A (en) * 1978-04-24 1979-11-02 Rca Corp Armophous silicon solar battery
JPS5539404A (en) * 1978-08-18 1980-03-19 Hitachi Ltd Solid state pickup device
JPS5548979A (en) * 1978-10-03 1980-04-08 Mitsubishi Electric Corp Manufacturing method of solar cell
JPS56125881A (en) * 1980-03-06 1981-10-02 Fuji Photo Film Co Ltd Optical semiconductor element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132654A (ja) * 1983-01-20 1984-07-30 Fuji Xerox Co Ltd 長尺薄膜原稿読取素子の製造方法
JPS61181158A (ja) * 1985-02-06 1986-08-13 Nec Corp 密着型イメ−ジセンサ
JP2011228733A (ja) * 2011-06-29 2011-11-10 Mitsubishi Electric Corp フォトセンサー及びその製造方法
KR20180084984A (ko) 2015-12-21 2018-07-25 신와 콘트롤즈 가부시키가이샤 칠러 장치

Also Published As

Publication number Publication date
JPS6322074B2 (enrdf_load_stackoverflow) 1988-05-10

Similar Documents

Publication Publication Date Title
JPS56135980A (en) Photoelectric conversion element
ES475103A1 (es) Metodo de formar unna unidad semiconductora distribuida.
JPS57115556A (en) Photoconductive material
DE3683979D1 (de) Durchsichtige leitende schicht und verfahren zu deren herstellung.
JPS644754A (en) Photosensitive body
JPS5721875A (en) Photosensor
JPS57204178A (en) Optoelectric transducer
KR870008225A (ko) 유기중합체필름내의 금속 구조의 부착을 위해 광감성 음극을 사용하는 금속층 부착방법
JPS5217031A (en) Thermal fixing device
JPS55111180A (en) Thin-film solar battery of high output voltage
JPS5377628A (en) Electrophotographic system
JPS56150877A (en) Photoelectric converter
JPS57114290A (en) Amorphous thin film solar battery
JPS5739569A (en) Solid state image pickup device
JPS644083A (en) Photovoltaic device
JPS5694674A (en) Thin-film solar cell
JPS5745980A (en) Amorphous solar battery and manufacture thereof
JPS5739587A (en) Manufacture of photoelectric converter
JPS5745288A (en) Thin film photo diode
JPS52117063A (en) Preparation of ohmic ontact layer in semiconductor device
JPS5776882A (en) Thin film type solar battery
JPS5721874A (en) Amorphous solar battery
JPS6459237A (en) Electrophotographic sensitive body
JPS5411674A (en) Semiconductor device of mesa type
JPS57115557A (en) Photoconductive material