JPS5721824A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5721824A
JPS5721824A JP9607580A JP9607580A JPS5721824A JP S5721824 A JPS5721824 A JP S5721824A JP 9607580 A JP9607580 A JP 9607580A JP 9607580 A JP9607580 A JP 9607580A JP S5721824 A JPS5721824 A JP S5721824A
Authority
JP
Japan
Prior art keywords
layer
protective film
compound semiconductor
injected
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9607580A
Other languages
English (en)
Japanese (ja)
Other versions
JPS634345B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Hidetoshi Nishi
Sukehisa Hiyamizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9607580A priority Critical patent/JPS5721824A/ja
Publication of JPS5721824A publication Critical patent/JPS5721824A/ja
Publication of JPS634345B2 publication Critical patent/JPS634345B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
JP9607580A 1980-07-14 1980-07-14 Manufacture of semiconductor device Granted JPS5721824A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9607580A JPS5721824A (en) 1980-07-14 1980-07-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9607580A JPS5721824A (en) 1980-07-14 1980-07-14 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5721824A true JPS5721824A (en) 1982-02-04
JPS634345B2 JPS634345B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-01-28

Family

ID=14155276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9607580A Granted JPS5721824A (en) 1980-07-14 1980-07-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5721824A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5974901U (ja) * 1982-11-11 1984-05-21 小片　進 連続袋を装着したごみ収納容器
JPS59149023A (ja) * 1983-02-16 1984-08-25 Nec Corp 半導体への不純物の導入方法
JPS60250622A (ja) * 1984-05-25 1985-12-11 Nec Corp 不純物の導入方法
JPH01231317A (ja) * 1988-03-11 1989-09-14 Kokusai Denshin Denwa Co Ltd <Kdd> 光半導体素子の製造方法
JPH04274320A (ja) * 1991-03-01 1992-09-30 Nippon Telegr & Teleph Corp <Ntt> ＧａＡｓ基板中にイオン注入能動層を形成する方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4736965A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1971-04-07 1972-11-30
JPS50102260A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-01-07 1975-08-13
JPS52131453A (en) * 1976-04-28 1977-11-04 Hitachi Ltd Thermal treating method for chemical compound semiconductor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4736965A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1971-04-07 1972-11-30
JPS50102260A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-01-07 1975-08-13
JPS52131453A (en) * 1976-04-28 1977-11-04 Hitachi Ltd Thermal treating method for chemical compound semiconductor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5974901U (ja) * 1982-11-11 1984-05-21 小片　進 連続袋を装着したごみ収納容器
JPS59149023A (ja) * 1983-02-16 1984-08-25 Nec Corp 半導体への不純物の導入方法
JPS60250622A (ja) * 1984-05-25 1985-12-11 Nec Corp 不純物の導入方法
JPH01231317A (ja) * 1988-03-11 1989-09-14 Kokusai Denshin Denwa Co Ltd <Kdd> 光半導体素子の製造方法
JPH04274320A (ja) * 1991-03-01 1992-09-30 Nippon Telegr & Teleph Corp <Ntt> ＧａＡｓ基板中にイオン注入能動層を形成する方法

Also Published As

Publication number Publication date
JPS634345B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-01-28

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