JPS57207384A - Phototransistor - Google Patents

Phototransistor

Info

Publication number
JPS57207384A
JPS57207384A JP56092859A JP9285981A JPS57207384A JP S57207384 A JPS57207384 A JP S57207384A JP 56092859 A JP56092859 A JP 56092859A JP 9285981 A JP9285981 A JP 9285981A JP S57207384 A JPS57207384 A JP S57207384A
Authority
JP
Japan
Prior art keywords
region
pad
type
emitter
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56092859A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244824B2 (enrdf_load_stackoverflow
Inventor
Yoshihiko Mizushima
Yoshihito Amamiya
Shigeaki Yamashita
Osamu Asano
Yoshikazu Yama
Motoaki Takaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Tateisi Electronics Co
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Tateisi Electronics Co, Omron Tateisi Electronics Co filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56092859A priority Critical patent/JPS57207384A/ja
Publication of JPS57207384A publication Critical patent/JPS57207384A/ja
Publication of JPS6244824B2 publication Critical patent/JPS6244824B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H10F30/245—Bipolar phototransistors

Landscapes

  • Light Receiving Elements (AREA)
JP56092859A 1981-06-15 1981-06-15 Phototransistor Granted JPS57207384A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56092859A JPS57207384A (en) 1981-06-15 1981-06-15 Phototransistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56092859A JPS57207384A (en) 1981-06-15 1981-06-15 Phototransistor

Publications (2)

Publication Number Publication Date
JPS57207384A true JPS57207384A (en) 1982-12-20
JPS6244824B2 JPS6244824B2 (enrdf_load_stackoverflow) 1987-09-22

Family

ID=14066150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56092859A Granted JPS57207384A (en) 1981-06-15 1981-06-15 Phototransistor

Country Status (1)

Country Link
JP (1) JPS57207384A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter
US5309013A (en) * 1985-04-30 1994-05-03 Canon Kabushiki Kaisha Photoelectric conversion device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter
US4791469A (en) * 1983-07-02 1988-12-13 Canon Kabushiki Kaisha Photoelectric converter
US5128735A (en) * 1983-07-02 1992-07-07 Canon Kabushiki Kaisha Photoelectric converter with phototransistor and refresh means
US5309013A (en) * 1985-04-30 1994-05-03 Canon Kabushiki Kaisha Photoelectric conversion device

Also Published As

Publication number Publication date
JPS6244824B2 (enrdf_load_stackoverflow) 1987-09-22

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