JPS57199251A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57199251A
JPS57199251A JP56085234A JP8523481A JPS57199251A JP S57199251 A JPS57199251 A JP S57199251A JP 56085234 A JP56085234 A JP 56085234A JP 8523481 A JP8523481 A JP 8523481A JP S57199251 A JPS57199251 A JP S57199251A
Authority
JP
Japan
Prior art keywords
type
region
substrate
potential
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56085234A
Other languages
English (en)
Japanese (ja)
Other versions
JPS634715B2 (enrdf_load_stackoverflow
Inventor
Makoto Tachiki
Yasutaka Horiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56085234A priority Critical patent/JPS57199251A/ja
Publication of JPS57199251A publication Critical patent/JPS57199251A/ja
Publication of JPS634715B2 publication Critical patent/JPS634715B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211Design considerations for internal polarisation
    • H10D89/311Design considerations for internal polarisation in bipolar devices

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP56085234A 1981-06-01 1981-06-01 Semiconductor device Granted JPS57199251A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56085234A JPS57199251A (en) 1981-06-01 1981-06-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56085234A JPS57199251A (en) 1981-06-01 1981-06-01 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57199251A true JPS57199251A (en) 1982-12-07
JPS634715B2 JPS634715B2 (enrdf_load_stackoverflow) 1988-01-30

Family

ID=13852866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56085234A Granted JPS57199251A (en) 1981-06-01 1981-06-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57199251A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4951102A (en) * 1988-08-24 1990-08-21 Harris Corporation Trench gate VCMOS
US5032529A (en) * 1988-08-24 1991-07-16 Harris Corporation Trench gate VCMOS method of manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4951102A (en) * 1988-08-24 1990-08-21 Harris Corporation Trench gate VCMOS
US5032529A (en) * 1988-08-24 1991-07-16 Harris Corporation Trench gate VCMOS method of manufacture

Also Published As

Publication number Publication date
JPS634715B2 (enrdf_load_stackoverflow) 1988-01-30

Similar Documents

Publication Publication Date Title
KR900000817B1 (en) Semiconductor ic device manufacturing method
JPS5623771A (en) Semiconductor memory
JPS57201070A (en) Semiconductor device
JPS57199251A (en) Semiconductor device
JPS5473585A (en) Gate turn-off thyristor
JPS5691470A (en) Semiconductor
JPS57118669A (en) Multiemitter type npn transistor
JPS57118664A (en) Semiconductor device
TW344108B (en) A bipolar transistor and method of manufacturing thereof
JPS6445159A (en) Semiconductor device
JPS5658258A (en) Semiconductor integrated circuit
JPS56126960A (en) Manufacture of semiconductor device
JPS5780768A (en) Semiconductor device
JPS5489477A (en) Production of semiconductor device
JPS522180A (en) Method of fabricating mos semiconductor integrated circuit
JPS57126162A (en) Semiconductor device
JPS55113376A (en) Manufacturing method of semiconductor device
JPS5578568A (en) Manufacture of semiconductor device
JPS5496975A (en) Semiconductor device
JPS5244163A (en) Process for productin of semiconductor element
JPS54142080A (en) Semiconductor device
JPS6442836A (en) Manufacture of semiconductor device
JPS5234675A (en) Manufacturing process of semiconductor device
JPS5522835A (en) Manufacturing of transistor
JPS56130964A (en) Integrated circuit device