JPS5719857B2 - - Google Patents
Info
- Publication number
- JPS5719857B2 JPS5719857B2 JP9583979A JP9583979A JPS5719857B2 JP S5719857 B2 JPS5719857 B2 JP S5719857B2 JP 9583979 A JP9583979 A JP 9583979A JP 9583979 A JP9583979 A JP 9583979A JP S5719857 B2 JPS5719857 B2 JP S5719857B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H10P95/00—
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- H10W46/00—
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- H10W46/601—
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9583979A JPS5621321A (en) | 1979-07-27 | 1979-07-27 | Automatically setting method of focus and exposure coefficient of electron beam exposure apparatus |
| DE8080302557T DE3066694D1 (en) | 1979-07-27 | 1980-07-25 | Method of electron beam exposure |
| EP80302557A EP0023810B1 (en) | 1979-07-27 | 1980-07-25 | Method of electron beam exposure |
| US06/387,678 US4443704A (en) | 1979-07-27 | 1982-06-11 | Method of electron beam exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9583979A JPS5621321A (en) | 1979-07-27 | 1979-07-27 | Automatically setting method of focus and exposure coefficient of electron beam exposure apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5621321A JPS5621321A (en) | 1981-02-27 |
| JPS5719857B2 true JPS5719857B2 (cg-RX-API-DMAC10.html) | 1982-04-24 |
Family
ID=14148539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9583979A Granted JPS5621321A (en) | 1979-07-27 | 1979-07-27 | Automatically setting method of focus and exposure coefficient of electron beam exposure apparatus |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4443704A (cg-RX-API-DMAC10.html) |
| EP (1) | EP0023810B1 (cg-RX-API-DMAC10.html) |
| JP (1) | JPS5621321A (cg-RX-API-DMAC10.html) |
| DE (1) | DE3066694D1 (cg-RX-API-DMAC10.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6164041A (ja) * | 1984-09-03 | 1986-04-02 | Matsushita Electronics Corp | マグネトロン構体装着装置 |
| JPS62141202U (cg-RX-API-DMAC10.html) * | 1986-02-28 | 1987-09-05 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3172847D1 (en) * | 1981-11-30 | 1985-12-12 | Ibm | Method and apparatus for improving the uniformness of patterns generated by electron beam lithography |
| JPS5968928A (ja) * | 1982-10-13 | 1984-04-19 | Pioneer Electronic Corp | 半導体装置の製造方法 |
| JPS59114818A (ja) * | 1982-12-21 | 1984-07-03 | Toshiba Corp | 電子ビ−ムパタ−ン描画方法 |
| JPS59150422A (ja) * | 1983-01-31 | 1984-08-28 | Fujitsu Ltd | 露光処理方法 |
| US4724222A (en) * | 1986-04-28 | 1988-02-09 | American Telephone And Telegraph Company, At&T Bell Laboratories | Wafer chuck comprising a curved reference surface |
| US5172331A (en) * | 1989-12-18 | 1992-12-15 | Fujitsu Limited | Apparatus and method for effecting exposure of sample to charged particle beam |
| US5136169A (en) * | 1991-04-05 | 1992-08-04 | Massachusetts Institute Of Technology | Energy beam locating |
| KR940009972B1 (ko) * | 1991-07-26 | 1994-10-19 | 삼성전자 주식회사 | 텔레비젼의 전원 제어회로 및 방법 |
| JP3453009B2 (ja) * | 1995-07-20 | 2003-10-06 | 富士通株式会社 | 電子ビーム露光装置及びこの装置に於けるマーク位置検出方法 |
| JP3544438B2 (ja) * | 1996-09-30 | 2004-07-21 | セイコーインスツルメンツ株式会社 | イオンビームによる加工装置 |
| JPH11191529A (ja) * | 1997-12-25 | 1999-07-13 | Nikon Corp | 荷電ビーム露光方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3857041A (en) * | 1969-07-03 | 1974-12-24 | Texas Instruments Inc | Electron beam patterning system for use in production of semiconductor devices |
| US3644700A (en) * | 1969-12-15 | 1972-02-22 | Ibm | Method and apparatus for controlling an electron beam |
| FR2181467B1 (cg-RX-API-DMAC10.html) * | 1972-04-25 | 1974-07-26 | Thomson Csf | |
| FR39852E (fr) * | 1972-06-30 | 1932-03-24 | Ig Farbenindustrie Ag | Procédé de production de colorants solides pour cuve |
| FR2220073B1 (cg-RX-API-DMAC10.html) * | 1973-03-02 | 1983-04-15 | Thomson Csf | |
| JPS5398781A (en) * | 1976-11-25 | 1978-08-29 | Jeol Ltd | Electron ray exposure unit |
| JPS5472980A (en) * | 1977-11-24 | 1979-06-11 | Hitachi Ltd | Electron-beam drawing unit |
| US4137459A (en) * | 1978-02-13 | 1979-01-30 | International Business Machines Corporation | Method and apparatus for applying focus correction in E-beam system |
-
1979
- 1979-07-27 JP JP9583979A patent/JPS5621321A/ja active Granted
-
1980
- 1980-07-25 EP EP80302557A patent/EP0023810B1/en not_active Expired
- 1980-07-25 DE DE8080302557T patent/DE3066694D1/de not_active Expired
-
1982
- 1982-06-11 US US06/387,678 patent/US4443704A/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6164041A (ja) * | 1984-09-03 | 1986-04-02 | Matsushita Electronics Corp | マグネトロン構体装着装置 |
| JPS62141202U (cg-RX-API-DMAC10.html) * | 1986-02-28 | 1987-09-05 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0023810B1 (en) | 1984-02-22 |
| EP0023810A1 (en) | 1981-02-11 |
| US4443704A (en) | 1984-04-17 |
| JPS5621321A (en) | 1981-02-27 |
| DE3066694D1 (en) | 1984-03-29 |