JPS57194522A - Thermal treatment of semiconductor wafer - Google Patents

Thermal treatment of semiconductor wafer

Info

Publication number
JPS57194522A
JPS57194522A JP7939281A JP7939281A JPS57194522A JP S57194522 A JPS57194522 A JP S57194522A JP 7939281 A JP7939281 A JP 7939281A JP 7939281 A JP7939281 A JP 7939281A JP S57194522 A JPS57194522 A JP S57194522A
Authority
JP
Japan
Prior art keywords
area
semiconductor wafers
diffusion
steam
inert gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7939281A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0373134B2 (enrdf_load_stackoverflow
Inventor
Takeshi Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP7939281A priority Critical patent/JPS57194522A/ja
Publication of JPS57194522A publication Critical patent/JPS57194522A/ja
Publication of JPH0373134B2 publication Critical patent/JPH0373134B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F22—STEAM GENERATION
    • F22B—METHODS OF STEAM GENERATION; STEAM BOILERS
    • F22B1/00—Methods of steam generation characterised by form of heating method
    • F22B1/003—Methods of steam generation characterised by form of heating method using combustion of hydrogen with oxygen

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
JP7939281A 1981-05-27 1981-05-27 Thermal treatment of semiconductor wafer Granted JPS57194522A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7939281A JPS57194522A (en) 1981-05-27 1981-05-27 Thermal treatment of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7939281A JPS57194522A (en) 1981-05-27 1981-05-27 Thermal treatment of semiconductor wafer

Publications (2)

Publication Number Publication Date
JPS57194522A true JPS57194522A (en) 1982-11-30
JPH0373134B2 JPH0373134B2 (enrdf_load_stackoverflow) 1991-11-20

Family

ID=13688585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7939281A Granted JPS57194522A (en) 1981-05-27 1981-05-27 Thermal treatment of semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS57194522A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01295425A (ja) * 1988-02-29 1989-11-29 Tel Sagami Ltd 酸化装置
JPH01319940A (ja) * 1988-06-22 1989-12-26 Kimmon Mfg Co Ltd 外部燃焼酸化装置
WO2002086958A1 (de) * 2001-04-23 2002-10-31 Mattson Thermal Products Gmbh Verfahren und vorrichtung zum erzeugen von prozessgasen

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5479034U (enrdf_load_stackoverflow) * 1977-11-15 1979-06-05

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5479034U (enrdf_load_stackoverflow) * 1977-11-15 1979-06-05

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01295425A (ja) * 1988-02-29 1989-11-29 Tel Sagami Ltd 酸化装置
JPH01319940A (ja) * 1988-06-22 1989-12-26 Kimmon Mfg Co Ltd 外部燃焼酸化装置
WO2002086958A1 (de) * 2001-04-23 2002-10-31 Mattson Thermal Products Gmbh Verfahren und vorrichtung zum erzeugen von prozessgasen
US7144826B2 (en) 2001-04-23 2006-12-05 Mattson Thermal Products Method and apparatus for the production of process gas that includes water vapor and hydrogen formed by burning oxygen in a hydrogen-rich environment

Also Published As

Publication number Publication date
JPH0373134B2 (enrdf_load_stackoverflow) 1991-11-20

Similar Documents

Publication Publication Date Title
JPS57126127A (en) Diffusion treating method for semiconductor wafer
JPS5588323A (en) Manufacture of semiconductor device
JPS57194522A (en) Thermal treatment of semiconductor wafer
JPS5740937A (en) Manufacture of semiconductor device
JPS54106180A (en) Manufacture of semiconductor integrated circuit
JPS56169324A (en) Diffusion of impurity
JPS5730338A (en) Thermal oxidizing device for semiconductor
JPS54970A (en) Impurity diffusion method
JPS5753960A (ja) Sentakusankamakunokeiseihoho
JPS52155969A (en) Reduced pressure heat treatment furnace of semiconductor wafers
JPS54102965A (en) Impurity diffusion method
JPS6218039A (ja) 半導体ウエフアの酸化装置
JPS5497368A (en) Thermal oxidizing unit
JPS54154268A (en) Manufacture of semiconductor device
JPS5470763A (en) Method and apparatus for uniform diffusion
JPS6469017A (en) Formation of oxynitride film
JPS5339080A (en) Sample feeding method
JPS5375862A (en) Surface stabilization method of semiconductor
JPS5555524A (en) Method of manufacturing semiconductor device
JPS5243361A (en) Thermal diffusion device for production of semiconductor device
JPS57124445A (en) Semiconductor substrate
JPS5788736A (en) Preparation of semiconductor device
JPS567437A (en) Heat treating method for semiconductor wafer
JPS53123081A (en) Semiconductor wafer heat treatment apparatus
JPS6468920A (en) Heat treatment of semiconductor wafer