JPS57193291A - Laser working device - Google Patents

Laser working device

Info

Publication number
JPS57193291A
JPS57193291A JP56076663A JP7666381A JPS57193291A JP S57193291 A JPS57193291 A JP S57193291A JP 56076663 A JP56076663 A JP 56076663A JP 7666381 A JP7666381 A JP 7666381A JP S57193291 A JPS57193291 A JP S57193291A
Authority
JP
Japan
Prior art keywords
laser light
transmittance
changing
size
laser oscillator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56076663A
Other languages
English (en)
Japanese (ja)
Other versions
JPS628277B2 (enrdf_load_stackoverflow
Inventor
Mikio Hongo
Hiroshi Yamaguchi
Takeoki Miyauchi
Katsuro Mizukoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56076663A priority Critical patent/JPS57193291A/ja
Publication of JPS57193291A publication Critical patent/JPS57193291A/ja
Publication of JPS628277B2 publication Critical patent/JPS628277B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
JP56076663A 1981-05-22 1981-05-22 Laser working device Granted JPS57193291A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56076663A JPS57193291A (en) 1981-05-22 1981-05-22 Laser working device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56076663A JPS57193291A (en) 1981-05-22 1981-05-22 Laser working device

Publications (2)

Publication Number Publication Date
JPS57193291A true JPS57193291A (en) 1982-11-27
JPS628277B2 JPS628277B2 (enrdf_load_stackoverflow) 1987-02-21

Family

ID=13611645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56076663A Granted JPS57193291A (en) 1981-05-22 1981-05-22 Laser working device

Country Status (1)

Country Link
JP (1) JPS57193291A (enrdf_load_stackoverflow)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6086833A (ja) * 1983-10-19 1985-05-16 Hitachi Ltd 半導体装置の食刻深さ測定方法および装置
US4749840A (en) * 1986-05-16 1988-06-07 Image Micro Systems, Inc. Intense laser irradiation using reflective optics
JPH03207587A (ja) * 1990-01-08 1991-09-10 Mitsubishi Heavy Ind Ltd レーザ溶接モニタリング装置
US5708252A (en) * 1986-09-26 1998-01-13 Semiconductor Energy Laboratory Co., Ltd. Excimer laser scanning system
US6149988A (en) * 1986-09-26 2000-11-21 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US6204099B1 (en) 1995-02-21 2001-03-20 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6261856B1 (en) 1987-09-16 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US6410374B1 (en) 1992-12-26 2002-06-25 Semiconductor Energy Laborartory Co., Ltd. Method of crystallizing a semiconductor layer in a MIS transistor
US6475839B2 (en) 1993-11-05 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing of TFT device by backside laser irradiation
US6544825B1 (en) 1992-12-26 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
US6638800B1 (en) 1992-11-06 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
WO2006129473A1 (ja) * 2005-06-01 2006-12-07 Phoeton Corp. レーザー加工装置及びレーザー加工方法
JP2012091191A (ja) * 2010-10-26 2012-05-17 Panasonic Electric Works Sunx Co Ltd レーザ加工装置
JP2013013905A (ja) * 2011-06-30 2013-01-24 Panasonic Industrial Devices Sunx Co Ltd レーザ加工装置
CN111781897A (zh) * 2020-07-14 2020-10-16 上海柏楚电子科技股份有限公司 加工控制方法、控制装置、加工控制系统及存储介质

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55109588A (en) * 1979-02-16 1980-08-23 Hitachi Ltd Laser working apparatus
JPS5647288A (en) * 1979-09-28 1981-04-28 Hitachi Ltd Laser working apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55109588A (en) * 1979-02-16 1980-08-23 Hitachi Ltd Laser working apparatus
JPS5647288A (en) * 1979-09-28 1981-04-28 Hitachi Ltd Laser working apparatus

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6086833A (ja) * 1983-10-19 1985-05-16 Hitachi Ltd 半導体装置の食刻深さ測定方法および装置
US4749840A (en) * 1986-05-16 1988-06-07 Image Micro Systems, Inc. Intense laser irradiation using reflective optics
US5708252A (en) * 1986-09-26 1998-01-13 Semiconductor Energy Laboratory Co., Ltd. Excimer laser scanning system
US6149988A (en) * 1986-09-26 2000-11-21 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US6261856B1 (en) 1987-09-16 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
JPH03207587A (ja) * 1990-01-08 1991-09-10 Mitsubishi Heavy Ind Ltd レーザ溶接モニタリング装置
US6638800B1 (en) 1992-11-06 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US7179726B2 (en) 1992-11-06 2007-02-20 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US7799665B2 (en) 1992-11-06 2010-09-21 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US6410374B1 (en) 1992-12-26 2002-06-25 Semiconductor Energy Laborartory Co., Ltd. Method of crystallizing a semiconductor layer in a MIS transistor
US6544825B1 (en) 1992-12-26 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
US7351615B2 (en) 1992-12-26 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
US6475839B2 (en) 1993-11-05 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing of TFT device by backside laser irradiation
US6617612B2 (en) 1993-11-05 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a semiconductor integrated circuit
US7045403B2 (en) 1995-02-21 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6265745B1 (en) 1995-02-21 2001-07-24 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6921686B2 (en) 1995-02-21 2005-07-26 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6709905B2 (en) 1995-02-21 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US7615423B2 (en) 1995-02-21 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6204099B1 (en) 1995-02-21 2001-03-20 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
WO2006129473A1 (ja) * 2005-06-01 2006-12-07 Phoeton Corp. レーザー加工装置及びレーザー加工方法
US8389894B2 (en) 2005-06-01 2013-03-05 Phoeton Corp. Laser processing apparatus and laser processing method
JP2012091191A (ja) * 2010-10-26 2012-05-17 Panasonic Electric Works Sunx Co Ltd レーザ加工装置
JP2013013905A (ja) * 2011-06-30 2013-01-24 Panasonic Industrial Devices Sunx Co Ltd レーザ加工装置
CN111781897A (zh) * 2020-07-14 2020-10-16 上海柏楚电子科技股份有限公司 加工控制方法、控制装置、加工控制系统及存储介质

Also Published As

Publication number Publication date
JPS628277B2 (enrdf_load_stackoverflow) 1987-02-21

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