JPS57192032A - Forming method for insulating film - Google Patents

Forming method for insulating film

Info

Publication number
JPS57192032A
JPS57192032A JP56076553A JP7655381A JPS57192032A JP S57192032 A JPS57192032 A JP S57192032A JP 56076553 A JP56076553 A JP 56076553A JP 7655381 A JP7655381 A JP 7655381A JP S57192032 A JPS57192032 A JP S57192032A
Authority
JP
Japan
Prior art keywords
electrode
insulating film
gas
plasma
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56076553A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6360532B2 (cg-RX-API-DMAC10.html
Inventor
Akira Takamatsu
Miyoko Shibata
Takeo Yoshimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56076553A priority Critical patent/JPS57192032A/ja
Publication of JPS57192032A publication Critical patent/JPS57192032A/ja
Publication of JPS6360532B2 publication Critical patent/JPS6360532B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/60—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP56076553A 1981-05-22 1981-05-22 Forming method for insulating film Granted JPS57192032A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56076553A JPS57192032A (en) 1981-05-22 1981-05-22 Forming method for insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56076553A JPS57192032A (en) 1981-05-22 1981-05-22 Forming method for insulating film

Publications (2)

Publication Number Publication Date
JPS57192032A true JPS57192032A (en) 1982-11-26
JPS6360532B2 JPS6360532B2 (cg-RX-API-DMAC10.html) 1988-11-24

Family

ID=13608443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56076553A Granted JPS57192032A (en) 1981-05-22 1981-05-22 Forming method for insulating film

Country Status (1)

Country Link
JP (1) JPS57192032A (cg-RX-API-DMAC10.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302555A (en) * 1991-06-10 1994-04-12 At&T Bell Laboratories Anisotropic deposition of dielectrics
EP0622474A1 (fr) * 1993-04-29 1994-11-02 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Procédé pour créer un dépôt d'oxyde de silicium sur un substrat solide en défilement
US5744403A (en) * 1989-08-31 1998-04-28 Lucent Technologies Inc. Dielectric film deposition method and apparatus
JP2007150086A (ja) * 2005-11-29 2007-06-14 Fujitsu Ltd 半導体装置の製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5744403A (en) * 1989-08-31 1998-04-28 Lucent Technologies Inc. Dielectric film deposition method and apparatus
US5302555A (en) * 1991-06-10 1994-04-12 At&T Bell Laboratories Anisotropic deposition of dielectrics
EP0622474A1 (fr) * 1993-04-29 1994-11-02 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Procédé pour créer un dépôt d'oxyde de silicium sur un substrat solide en défilement
FR2704558A1 (fr) * 1993-04-29 1994-11-04 Air Liquide Procédé et dispositif pour créer un dépôt d'oxyde de silicium sur un substrat solide en défilement.
US5576076A (en) * 1993-04-29 1996-11-19 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Process for creating a deposit of silicon oxide on a traveling solid substrate
US5753193A (en) * 1993-04-29 1998-05-19 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Device for creating a deposit of silicon oxide on a traveling solid substrate
JP2007150086A (ja) * 2005-11-29 2007-06-14 Fujitsu Ltd 半導体装置の製造方法
US7749897B2 (en) 2005-11-29 2010-07-06 Fujitsu Semiconductor Limited Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS6360532B2 (cg-RX-API-DMAC10.html) 1988-11-24

Similar Documents

Publication Publication Date Title
US4854263B1 (en) Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
KR910007089A (ko) 반도체 웨이퍼 처리 장치용 세척 방법
DE3371543D1 (en) Method of making amorphous semiconductor alloys and devices using microwave energy
TW362118B (en) Method for depositing amorphous SiNC coatings
JPS5767938A (en) Production of photoconductive member
CA2051554A1 (en) Thin film deposition method
KR910015011A (ko) 금속 또는 금속 실리사이드막의 형성방법
GB1346938A (en) Reactors and method of manufacture of semiconductor devices using such a reactor
ES2020479A6 (es) Metodo y aparato para formar piroliticamente un revestimiento de oxido sobre un sustrato de vidrio caliente.
EP0164928A3 (en) Vertical hot wall cvd reactor
JPS57192032A (en) Forming method for insulating film
US4651673A (en) CVD apparatus
EP0167374A3 (en) Chemical vapor deposition wafer boat
JPS56138921A (en) Method of formation for impurity introduction layer
EP1039519A3 (en) Method and apparatus for forming a porous SiO2 interlayer insulating film
JPS57152132A (en) Chemical vapor growing method
JPS5434676A (en) Vapor growth method and apparatus for high-purity semiconductor layer
JPS56149306A (en) Formation of silicon nitride film
JPS55121650A (en) Cvd device
EP0412644A3 (en) Low temperature low pressure thermal cvd process for forming conformal group iii and/or group v-doped silicate glass coating of uniform thickness on integrated structure
JPS6451620A (en) Vapor growth method
JPS6425518A (en) Method for forming amorphous silicon film
JPS57175797A (en) Epitaxial growth under reduced pressure
FR2443137A1 (fr) Procede pour ameliorer l'uniformite des couches epitaxiales, dispositif et produits obtenus
JPS649626A (en) Semiconductor device