JPS6360532B2 - - Google Patents

Info

Publication number
JPS6360532B2
JPS6360532B2 JP56076553A JP7655381A JPS6360532B2 JP S6360532 B2 JPS6360532 B2 JP S6360532B2 JP 56076553 A JP56076553 A JP 56076553A JP 7655381 A JP7655381 A JP 7655381A JP S6360532 B2 JPS6360532 B2 JP S6360532B2
Authority
JP
Japan
Prior art keywords
film
psg
insulating film
plasma
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56076553A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57192032A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP56076553A priority Critical patent/JPS57192032A/ja
Publication of JPS57192032A publication Critical patent/JPS57192032A/ja
Publication of JPS6360532B2 publication Critical patent/JPS6360532B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/60—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP56076553A 1981-05-22 1981-05-22 Forming method for insulating film Granted JPS57192032A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56076553A JPS57192032A (en) 1981-05-22 1981-05-22 Forming method for insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56076553A JPS57192032A (en) 1981-05-22 1981-05-22 Forming method for insulating film

Publications (2)

Publication Number Publication Date
JPS57192032A JPS57192032A (en) 1982-11-26
JPS6360532B2 true JPS6360532B2 (cg-RX-API-DMAC10.html) 1988-11-24

Family

ID=13608443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56076553A Granted JPS57192032A (en) 1981-05-22 1981-05-22 Forming method for insulating film

Country Status (1)

Country Link
JP (1) JPS57192032A (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0419053B1 (en) * 1989-08-31 1997-12-29 AT&T Corp. Dielectric film deposition method and apparatus
DE69231390D1 (de) * 1991-06-10 2000-10-05 At & T Corp Anisotropische Ablagerung von Dielektrika
FR2704558B1 (fr) * 1993-04-29 1995-06-23 Air Liquide Procede et dispositif pour creer un depot d'oxyde de silicium sur un substrat solide en defilement.
JP4533304B2 (ja) 2005-11-29 2010-09-01 富士通セミコンダクター株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS57192032A (en) 1982-11-26

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