JPS57190391A - Manufacture of semiconductor light-emitting element - Google Patents
Manufacture of semiconductor light-emitting elementInfo
- Publication number
- JPS57190391A JPS57190391A JP7592681A JP7592681A JPS57190391A JP S57190391 A JPS57190391 A JP S57190391A JP 7592681 A JP7592681 A JP 7592681A JP 7592681 A JP7592681 A JP 7592681A JP S57190391 A JPS57190391 A JP S57190391A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type inp
- mesa structure
- groove
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Weting (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7592681A JPS57190391A (en) | 1981-05-20 | 1981-05-20 | Manufacture of semiconductor light-emitting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7592681A JPS57190391A (en) | 1981-05-20 | 1981-05-20 | Manufacture of semiconductor light-emitting element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57190391A true JPS57190391A (en) | 1982-11-22 |
Family
ID=13590374
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7592681A Pending JPS57190391A (en) | 1981-05-20 | 1981-05-20 | Manufacture of semiconductor light-emitting element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57190391A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4958202A (en) * | 1986-09-12 | 1990-09-18 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method of manufacturing the same |
-
1981
- 1981-05-20 JP JP7592681A patent/JPS57190391A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4958202A (en) * | 1986-09-12 | 1990-09-18 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method of manufacturing the same |
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